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MBRS3200T3G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 6
1 Publication Order Number:
MBRS3200T3/D
MBRS3200T3G,
NRVBS3200T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very High Blocking Voltage − 200 V
• 175°C Operating Junction Temperature
• Guard−Ring for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements: AEC−Q101
Qualified and PPAP Capable
• All Packages are Pb−Free*
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
• Device Meets MSL 1 Requirements
• ESD Ratings:
♦ Machine Model = A
♦ Human Body Model = 1C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
SMB
CASE 403A
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERE
200 VOLTS
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBRS3200T3G SMB
(Pb−Free)
2,500 /
Tape & Reel
B320 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
AYWW
B320G
G
MARKING DIAGRAM
NRVBS3200T3G SMB
(Pb−Free)
2,500 /
Tape & Reel
MBRS3200T3G, NRVBS3200T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
200 V
Average Rectified Forward Current (T
L
= 150 °C) I
F(AV)
3.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
100
A
Operating Junction Temperature T
J
−65 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JL
R
q
JA
13
62
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(I
F
= 3.0 A, T
J
= 25°C)
(I
F
= 4.0 A, T
J
= 25°C)
(I
F
= 3.0 A, T
J
= 150°C)
V
F
0.84
0.86
0.59
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 150°C)
I
R
1.0
5.0
mA
mA
1. Minimum pad size (0.108 × 0.085 inch) for each lead on FR4 board.
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
100
1
0.1
1.00.2 0.3 0.4 0.5 0.6 0.7
V
F
, FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
10
0.8 0.9 1.1 1.3
I
F
, FORWARD CURRENT (A)
T
A
= 25°C
T
A
= 150°C
100
1
0.1
1.00.2 0.3 0.4 0.5 0.6 0.7
V
F
, FORWARD VOLTAGE (V)
10
0.8 0.9 1.1 1.3
I
F
, FORWARD CURRENT (A)
T
A
= 25°C
T
A
= 150°C
1.2
T
A
= 175°C
T
A
= 175°C
1.2
T
A
= 100°C
T
A
= 100°C
MBRS3200T3G, NRVBS3200T3G
http://onsemi.com
3
1.0E−09
1600 20 40 60 80 100
V
R
, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
120 140 180 200
I
R
, REVERSE CURRENT (A)
T
A
= 25°C
T
A
= 150°C
T
A
= 100°C
1.0E−08
1.0E−07
1.0E−06
1.0E−05
1.0E−04
1.0E−02
1.0E−09
1600 20 40 60 80 100
V
R
, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
120 140 180 200
I
R
, REVERSE CURRENT (A)
1.0E−05
1.0E−04
1.0E−03
1.0E−07
1.0E−02
T
A
= 175°C
1.0E−03
T
A
= 25°C
T
A
= 150°C
T
A
= 100°C
T
A
= 175°C
1.0E−06
1.0E−08
Figure 5. Typical Capacitance
1000
10
1600 20 40 60 80 100
V
R
, REVERSE VOLTAGE (V)
100
120 140 180 200
C, CAPACITANCE (pF)
T
C
= 25°C
f = 1 MHz
Typical Capacitance
at 0 V = 209 V
0
15080 90 100 110 120
T
L
, LEAD TEMPERATURE (°C)
Figure 6. Current Derating − Lead
130 140 180
I
F
, AVERAGE FORWARD CURRENT (A)
1
2
3
4
6
7
5
SQUARE WAVE
dc
Figure 7. Forward Power Dissipation
5
0
40123
I
O
, AVERAGE FORWARD CURRENT (A)
2.5
56
P
fo
, AVERAGE POWER DISSIPATION (W)
0.5
1
1.5
2
4.5
3
3.5
4
SQUARE WAVE
dc
160 170
R
q
JL
= 13°C/W
P1-P3P4-P4

MBRS3200T3G

Mfr. #:
Buy MBRS3200T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 3A 200V
Lifecycle:
New from this manufacturer.
Delivery:
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