BFP 540F E6327 Datasheet BFP 540F E6327 | P1-P3

BFP540F

Jan-28-2004

1

NPN Silicon RF Transistor

• For highest gain low noise amplifier

at 1.8 GHz

• Outstanding G

ms

= 20 dB

Noise Figure F = 0.9 dB

• Gold metallization for high reliability

• SIEGET

45 - Line

TSFP-4

1

2

4

3

XYs

A T s

1

2

3

4

d i r e c t i o n o f u n r e e l i n g

t o p v i e w

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFP540F ATs*

1=B 2=E 3=C 4=E - - TSFP-4

* Pin configuration fixed relative to marking (see package picture)

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage V

CEO

4.5 V

Collector-emitter voltage V

CES

14

Collector-base voltage V

CBO

14

Emitter-base voltage V

EBO

1

Collector current I

C

80 mA

Base current I

B

8

Total power dissipation

1)

T

S

≤ 80°C P

to

t

250 mW

Junction temperature T

j

150 °C

Ambient temperature T

A

-65 ... 150

Storage temperature T

st

g

-65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point

2)

R

thJS

≤ 280

K/W

1

T

S

is measured on the collector lead at the soldering point to the pcb

2

For calculation of R

thJA

please refer to Application Note Thermal Resistance

BFP540F

Jan-28-2004

2

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

C

= 1 mA, I

B

= 0

V

(BR)CEO

4.5 5 - V

Collector-emitter cutoff current

V

CE

= 14 V, V

BE

= 0

I

CES

- - 10 µA

Collector-base cutoff current

V

CB

= 5 V, I

E

= 0

I

CBO

- - 100 nA

Emitter-base cutoff current

V

EB

= 0.5 V, I

C

= 0

I

EBO

- - 10 µA

DC current gain

I

C

= 20 mA, V

CE

= 3.5 V

h

FE

50 110 200 -

BFP540F

Jan-28-2004

3

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

I

C

= 50 mA, V

CE

= 4 V, f = 1 GHz

f

T

21 30 - GHz

Collector-base capacitance

V

CB

= 2 V, f = 1 MHz

C

cb

- 0.14 0.24 pF

Collector emitter capacitance

V

CE

= 2 V, f = 1 MHz

C

ce

- 0.3 -

Emitter-base capacitance

V

EB

= 0.5 V, f = 1 MHz

C

eb

- 0.6 -

Noise figure

I

C

= 5 mA, V

CE

= 2 V, f = 1.8 GHz, Z

S

= Z

Sopt

I

C

= 5 mA, V

CE

= 2 V, f = 3 GHz, Z

S

= Z

Sopt

F

-

0.9

1.3

1.4

-

dB

Power gain, maximum available

1)

I

C

= 20 mA, V

CE

= 2 V, Z

S

= Z

Sopt

,

Z

L

= Z

Lopt

, f = 1.8 GHz

I

C

= 20 mA, V

CE

= 2 V, Z

S

= Z

Sopt

,

Z

L

= Z

Lopt

, f = 3 GHz

G

ma

-

20

14.5

-

Transducer gain

I

C

= 20 mA, V

CE

= 2 V, Z

S

= Z

L

= 50 Ω,

f = 1.8 GHz

I

C

= 20 mA, V

CE

= 2 V, Z

S

= Z

L

= 50 Ω,

f = 3 GHz

|S

21e

|

2

15.5

-

18

13

-

dB

Third order intercept point at output

2)

V

CE

= 2 V, I

C

= 20 mA, f = 1.8 GHz,

Z

S

= Z

L

= 50 Ω

IP

3

- 24.5 - dBm

1dB Compression point at output

I

C

= 20 mA, V

CE

= 2 V, Z

S

= Z

L

= 50 Ω,

f = 1.8 GHz

P

-1dB

- 11 -

1

G

ma

= |S

21e

/ S

12e

| (k-(k²-1)

1/2

), G

ms

= |S

21e

/ S

12e

|

2

IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50

Ω from 0.1 MHz to 6 GHz

BFP 540F E6327

BFP 540F E6327

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