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SI2343DS-T1-E3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 72079
S09-0133-Rev. B, 02-Feb-09
Vishay Siliconix
Si2343DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.4
1
10
20
0 0.2 0.4 0.6 0.8
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
1.2
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0246810
I
D
= 4.0 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 1 A
0.01
0
1
6
12
2
4
10 6000.1
Power (W)
Time (s)
8
10
100
T
A
= 25 °C
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
T
A
= 25 °C
Single Pulse
- Drain Current (A)I
D
DC
0.1
I
D(on)
Limited
DS(on)
*
Limited by R
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
I
DM
Limited
P(t) = 10
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
Document Number: 72079
S09-0133-Rev. B, 02-Feb-09
www.vishay.com
5
Vishay Siliconix
Si2343DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72079
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01
10
-3
10
-2
1 10 60010
-1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 120 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E
1
1
3
2
S
e
e
1
D
A
2
A
A
1
C
Seating Plane
0.10 mm
0.004"
C
C
L
1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim
MILLIMETERS INCHES
Min Max Min Max
A 0.89 1.12 0.035 0.044
A
1
0.01 0.10 0.0004 0.004
A
2
0.88 1.02 0.0346 0.040
b 0.35 0.50 0.014 0.020
c 0.085 0.18 0.003 0.007
D 2.80 3.04 0.110 0.120
E 2.10 2.64 0.083 0.104
E
1
1.20 1.40 0.047 0.055
e 0.95 BSC 0.0374 Ref
e
1
1.90 BSC 0.0748 Ref
L 0.40 0.60 0.016 0.024
L
1
0.64 Ref 0.025 Ref
S 0.50 Ref 0.020 Ref
q 3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
P1-P3P4-P6P7-P9

SI2343DS-T1-E3

Mfr. #:
Buy SI2343DS-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 4.0A 1.25W 53 mohms @ 10V
Lifecycle:
New from this manufacturer.
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