2PD602AXL_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 27 October 2008 3 of 9
NXP Semiconductors
2PD602AxL
50 V, 500 mA NPN general-purpose transistors
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2PD602AQL/DG SX*
2PD602ARL/DG SW*
2PD602ASL/DG SV*
Table 5. Marking codes
…continued
Type number Marking code
[1]
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 60 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 500 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
-1A
I
BM
peak base current single pulse;
t
p
≤ 1ms
- 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 250 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
[1]
- - 500 K/W
