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VI20202G-M3/4W

P1-P3P4-P6
V20202G, VF20202G, VB20202G, VI20202G
www.vishay.com
Vishay General Semiconductor
Revision: 12-Dec-16
1
Document Number: 87798
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.61 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology Gen 2
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 10 A
V
RRM
200 V
I
FSM
130 A
V
F
at I
F
= 10 A (T
A
= 125 °C) 0.71 V
T
J
max. 175 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations Common cathode
TO-220AB
1
2
3
1
K
2
3
TO-263AB
1
2
K
TO-262AA
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
CASE
PIN 3
PIN 1
PIN 2
PIN 3
K
V20202G
VI20202GVB20202G
TMBS
®
VF20202G
ITO-220AB
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20202G VF20202G VB20202G VI20202G UNIT
Maximum repetitive peak reverse voltage V
RRM
200 V
Maximum average forward rectified current (fig. 1)
per device
I
F(AV)
20
A
per diode 10
Maximum DC reverse voltage V
DC
160 V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
130 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)
from terminal to heatsink, t = 1 min
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-40 to +175 °C
V20202G, VF20202G, VB20202G, VI20202G
www.vishay.com
Vishay General Semiconductor
Revision: 12-Dec-16
2
Document Number: 87798
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
JA
(2)
Free air, without heatsink
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
(1)
I
F
= 5 A
T
A
= 25 °C
V
F
0.76 -
V
I
F
= 10 A 0.84 0.92
I
F
= 5 A
T
A
= 125 °C
0.61 -
I
F
= 10 A 0.71 0.8
Reverse current per diode
(2)
V
R
= 160 V
T
A
= 25 °C
I
R
0.3 - μA
T
A
= 125 °C 0.5 - mA
V
R
= 200 V
T
A
= 25 °C - 150 μA
T
A
= 125 °C 1.5 8 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20202G VF20202G VB20202G VI20202G UNIT
Typical thermal resistance
per diode R
JC
2.8 5.0 2.8
°C/Wper device R
JC
1.6 3.5 1.6
per device R
JA
(1)(2)
52 60 52
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V20202G-M3/4W 1.88 4W 50/tube Tube
ITO-220AB VF20202G-M3/4W 1.75 4W 50/tube Tube
TO-263AB VB20202G-M3/4W 1.39 4W 50/tube Tube
TO-263AB VB20202G-M3/8W 1.39 8W 800/reel Tape and reel
TO-262AA VI20202G-M3/4W 1.45 4W 50/tube Tube
V20202G, VF20202G, VB20202G, VI20202G
www.vishay.com
Vishay General Semiconductor
Revision: 12-Dec-16
3
Document Number: 87798
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
(D = Duty Cycle = 0.5)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
0
2
4
6
8
10
12
14
16
18
20
22
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Case Temperature (°C)
V(B,I)20202G
VF20202G
Rth
JA
= Rth
JC
T
A ,
Rth
JA
0
1
2
3
4
5
6
7
8
9
024681012
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T t
p
T
0.1
1
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
T
A
= 175 °C
0.01
0.1
1
10
100
1000
10 000
100 000
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (μA)
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
T
A
= 175 ° C
10
100
1000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1 MHz
V
sig
= 50 mV
p-p
0.1
1
10
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Case
V(B,I)20202G
VF20202G
P1-P3P4-P6

VI20202G-M3/4W

Mfr. #:
Buy VI20202G-M3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 20A 200V Trench Stky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
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