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IXBH12N300

P1-P3P4-P5
© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
C
= 25°C to 150°C 3000 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 3000 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C25
T
C
= 25°C 30 A
I
C110
T
C
= 110°C 12 A
I
CM
T
C
= 25°C, 1ms 100 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 30Ω I
CM
= 98 A
(RBSOA) Clamped Inductive Load 1500 V
P
C
T
C
= 25°C 160 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10 seconds 260 °C
M
d
Mounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
DS100120A(10/12)
IXBT12N300
IXBH12N300
V
CES
= 3000V
I
C110
= 12A
V
CE(sat)
≤≤
≤≤
≤ 3.2V
High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
Features
z
High Blocking Voltage
z
International Standard Packages
z
Anti-Parallel Diode
z
Low Conduction Losses
Advantages
z
Low Gate Drive Requirement
z
High Power Density
Applications:
z
Switched-Mode and Resonant-Mode
Power Supplies
z
Uninterruptible Power Supplies (UPS)
z
Laser Generators
z
Capacitor Discharge Circuits
z
AC Switches
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 3000 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= 0.8 • V
CES
, V
GE
= 0V 25 μA
T
J
= 125°C 1 mA
I
GES
V
CE
= 0V, V
GE
= ± 20V ±100 nA
V
CE(sat)
I
C
= 12A, V
GE
= 15V, Note 1 2.8 3.2 V
T
J
= 125°C 3.5 V
G = Gate C = Collector
E = Emiiter Tab = Collector
TO-247 (IXBH)
G
E
C (Tab)
C
TO-268 (IXBT)
E
G
C (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT12N300
IXBH12N300
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fS
I
C
= 12A, V
CE
= 10V, Note 1 6.5 10.8 S
C
ies
1290 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 56 pF
C
res
19 pF
Q
g
62 nC
Q
ge
I
C
= 12A, V
GE
= 15V, V
CE
= 1000V 13 nC
Q
gc
8.5 nC
t
d(on)
64 ns
t
r
140 ns
t
d(off)
180 ns
t
f
540 ns
t
d(on)
65 ns
t
r
395 ns
t
d(off)
175 ns
t
f
530 ns
R
thJC
0.78 °C/W
R
thCS
TO-247 0.21 °C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times, T
J
= 125°C
I
C
= 12A, V
GE
= 15V
V
CE
= 1250V, R
G
= 10Ω
Resistive Switching Times, T
J
= 25°C
I
C
= 12A, V
GE
= 15V
V
CE
= 1250V, R
G
= 10Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 12A, V
GE
= 0V 2.1 V
t
rr
1.4 μs
I
RM
21 A
I
F
= 6A, V
GE
= 0V, -di
F
/dt = 100A/μs
V
R
= 100V, V
GE
= 0V
TO-247 Outline
Terminals: 1 - Gate 2 - Collector
3 - Emitter
TO-268 Outline
Terminals: 1 - Gate 2,4 - Collector
3 - Emitter
e
∅ P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2012 IXYS CORPORATION, All Rights Reserved
IXBT12N300
IXBH12N300
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
4
8
12
16
20
24
0 0.5 1 1.5 2 2.5 3 3.5 4
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
40
80
120
160
200
240
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 25V
10V
15V
20V
5V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
4
8
12
16
20
24
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 24A
I
C
= 12A
I
C
= 6A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
5 7 9 1113151719212325
V
GE
- Volts
V
CE
- Volts
I
C
= 24A
T
J
= 25ºC
6A
12A
Fig. 6. Input Admittance
0
4
8
12
16
20
24
28
32
36
40
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
P1-P3P4-P5

IXBH12N300

Mfr. #:
Buy IXBH12N300
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
Lifecycle:
New from this manufacturer.
Delivery:
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