ZTX776

PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 1  JULY 94

FEATURES

* 200 Volt V

CEO

* 1 Amp continuous current

*P

tot

= 1 Watt

REFER TO ZTX755 FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-200 V

Collector-Emitter Voltage V

CEO

-200 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current I

CM

-2 A

Continuous Collector Current I

C

-1 A

Power Dissipation at T

amb

=25°C

derate above T

amb

=25°C

P

tot

1

5.7

W

mW/ °C

Operating and Storage Temperature Range T

j

:T

stg

-55 to +200 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

-200 V

I

C

=-100µA, I

E

=0

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

-200 V I

C

=-10mA, I

B

=0*

Emitter-Base Breakdown

Voltage

V

(BR)EBO

-5 V

I

E

=-100µA, I

C

=0

Collector Cut-Off

Current

I

CBO

-100 nA V

CB

=-160V, I

E

=0

Emitter Cut-Off Current I

EBO

-100 nA V

EB

=-4V, I

C

=0

Collector-Emitter

Saturation Voltage

V

CE(sat)

-0.5

-0.5

V

V

I

C

=-500mA, I

B

=-50mA*

I

C

=-1A, I

B

=-200mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-1.1 V I

C

=-500mA, I

B

=-50mA*

Base-Emitter Turn-On

Voltage

V

BE(on)

-1.0 V IC=-500mA, V

CE

=-5V*

Static Forward Current

Transfer Ratio

h

FE

50

50

20

I

C

=-10mA, V

CE

=-5V

I

C

=-500mA, V

CE

=-5V*

I

C

=-1A, V

CE

=-5V*

Transition

Frequency

f

T

30 MHz I

C

=-10mA, V

CE

=-20V

f=20MHz

Output Capacitance C

obo

20 pF V

CB

=-20V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

E-Line

TO92 Compatible

ZTX776

3-270

C

B

E

ZTX776

Mfr. #:

Manufacturer:

Diodes Incorporated

Description:

RF Bipolar Transistors PNP High Voltage

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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ZTX776