BYC8D-600,127

VS-85HF(R)40M8
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Vishay Semiconductors
Revision: 12-Feb-14
1
Document Number: 93529
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Recovery Diodes,
(Stud Version), 85 A
FEATURES
High surge current capability
Stud cathode and stud anode version
Leaded version available
Types up to 400 V V
RRM
Designed and qualified for industrial level
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Battery chargers
Converters
Power supplies
Machine tool controls
•Welding
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
I
F(AV)
85 A
Package DO-203AB (DO-5)
Circuit configuration Single diode
DO-203AB (DO-5)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS
85HF(R)
UNITS
400
I
F(AV)
85 A
T
C
140 °C
I
F(RMS)
133 A
I
FSM
50 Hz 1700
A
60 Hz 1800
I
2
t
50 Hz 14 500
A
2
s
60 Hz 13 500
V
RRM
Range 400 V
T
J
-65 to 180 °C
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
VS-85HF(R) 40 400 500 9
VS-85HF(R)40M8
www.vishay.com
Vishay Semiconductors
Revision: 12-Feb-14
2
Document Number: 93529
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS 85HF(R) UNITS
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
85 A
140 °C
Maximum RMS forward current I
F(RMS)
133 A
Maximum peak, one-cycle forward, non-repetitive
surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
1700
A
t = 8.3 ms 1800
t = 10 ms
100 % V
RRM
reapplied
1450
t = 8.3 ms 1500
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
14 500
A
2
s
t = 8.3 ms 13 500
t = 10 ms
100 % V
RRM
reapplied
10 500
t = 8.3 ms 9400
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 16 000 A
2
s
Value of threshold voltage
(up to 1200 V)
V
F(TO)
T
J
= T
J
maximum
0.68
V
Value of threshold voltage
(for 1400 V, 1600 V)
0.69
Value of forward slope resistance
(up to 1200 V)
r
f
T
J
= T
J
maximum
1.62
mW
Value of forward slope resistance
(for 1400 V, 1600 V)
1.75
Maximum forward voltage drop V
FM
I
pk
= 267 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave 1.2 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS 85HF(R) UNITS
Maximum junction operating and
storage temperature range
T
J
, T
Stg
-65 to 180 °C
Maximum thermal resistance, junction to case R
thJC
DC operation 0.35
K/W
Maximum thermal resistance, case to heatsink R
thCS
Mounting surface, smooth, flat and greased 0.25
Maximum allowable mounting torque + 0 %, - 10 %
Not lubricated thread, tighting on nut 3.4 (30)
N · m
(lbf · in)
Lubricated thread, tighting on nut 2.3 (20)
Not lubricated thread, tighting on hexagon 4.2 (37)
Lubricated thread, tighting on hexagon 3.2 (28)
Approximate weight Unleaded device
17 g
0.6 oz.
Case style See dimensions - link at the end of datasheet DO-203AB (DO-5)
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.10 0.08
T
J
= T
J
maximum K/W
120° 0.11 0.11
90° 0.13 0.13
60° 0.17 0.17
30° 0.26 0.26
VS-85HF(R)40M8
www.vishay.com
Vishay Semiconductors
Revision: 12-Feb-14
3
Document Number: 93529
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
I
F(AV)
- Average Forward Current (A)
Maximum Allowable Case Temperature (°C)
130
140
150
160
170
180
0 10 20 30 40 50 60 70 80 90 100
30°
60°
90°
120°
180°a
Conduction Angle
85HF(R)
R
thJC
(DC) = 0.35 K/W
I
F(AV)
- Average Forward Current (A)
Maximum Allowable Case Temperature (°C)
130
140
150
160
170
180
0 20 40 60 80 100 120 140
DC
30°
60°
90°
120°
180°
Conduction Period
85HF(R)
R
thJC
(DC) = 0.35 K/W
Maximum Average Forward
Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
I
F(AV)
- Average Forward Current (A)
0
10
20
30
40
50
60
70
80
90
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
85HF(R)
Tj = 180˚C
20 40 60 80 100 120 140 160 180
1 K/W
1.5 K/W
2 K/W
3 K/W
5 K/W
10 K/W
0.7 K/W
RthSA = 0.5 K/W - Delta R
0 10 20 30 40 50 60 70 80 90
Maximum Average Forward
Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
I
F(AV)
- Average Forward Current (A)
20 40 60 80 100 120 140 160 180
10 K/W
5 K/W
3 K/W
2 K/W
1 K/W
0.7 K/W
1.5 K/W
RthSA = 0.5 K/W - Delta R
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
85HF(R)
Tj = 180˚C

BYC8D-600,127

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers PWR 600 V 8 A
Lifecycle:
New from this manufacturer.
Delivery:
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