www.irf.com 1
02/10/2010
IRF6795MPbF
IRF6795MTRPbF
HEXFET
®
Power MOSFET plus Schottky Diode
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.60mH, R
G
= 25Ω, I
AS
= 25A.
Notes:
DirectFET ISOMETRIC
MX
SQ SX ST MQ
MX
MT MP
V
DSS
V
GS
R
DS(on)
R
DS(on)
25V max ±20V max
1.4mΩ@ 10V 2.4mΩ@ 4.5V
Description
The IRF6795MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6795MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6795MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
l RoHS Compliant Containing No Lead and Halogen Free
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
35nC 10nC 4.8nC 34nC 27nC 1.8V
0 102030405060708090
Q
G
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 20V
V
DS
= 13V
I
D
= 25A
0 2 4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
1
2
3
4
5
6
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
I
D
= 32A
T
J
= 25°C
T
J
= 125°C
Absolute Maximum Ratin
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
25
Max.
25
160
250
±20
25
32
190
PD - 97321C
