IRFB4215
2 www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.2 V T
J
= 25°C, I
S
= 90A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 78 120 ns T
J
= 25°C, I
F
= 64A
Q
rr
Reverse Recovery Charge ––– 250 380 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
115
360
A
Starting T
J
= 25°C, L = 60µH
R
G
= 25Ω, I
AS
= 85A, V
GS
=10V (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
I
SD
≤ 90A, di/dt ≤ 250A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
This is tested with same test conditions as the existing data sheet
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.066 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 9.0 mΩ V
GS
= 10V, I
D
= 54A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 61 ––– ––– S V
DS
= 25V, I
D
= 54A
––– ––– 25
µA
V
DS
= 60V, V
GS
= 0V
––– ––– 250 V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 170 I
D
= 64A
Q
gs
Gate-to-Source Charge ––– ––– 39 nC V
DS
= 48V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 59 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 22 ––– V
DD
= 30V
t
r
Rise Time ––– 160 ––– I
D
= 64A
t
d(off)
Turn-Off Delay Time ––– 77 ––– R
G
= 6.2Ω
t
f
Fall Time ––– 110 ––– V
GS
= 10V, See Fig. 10
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 4080 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 840 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 180 ––– pF ƒ = 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche Energy ––– 1080220 mJ I
AS
= 90A, L = 54µH
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
