OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BAS382-TR

P1-P3P4-P4
BAS381, BAS382, BAS383
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 15-May-12
1
Document Number: 85503
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diodes
MECHANICAL DATA
Case: MicroMELF
Weight: approx. 12 mg
Cathode band color: black
Packaging codes/options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Integrated protection ring against static
discharge
• Low capacitance
• Low leakage current
• Low forward voltage drop
• Very low switching time
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• General purpose and switching Schottky barrier diode
• HF-detector
• Protection circuit
• Diode for low currents with a low supply voltage
• Small battery charger
• Power supplies
• DC/DC converter for notebooks
PARTS TABLE
PART TYPE DIFFERENTATION ORDERING CODE INTERNAL CONSTRUCTION REMARKS
BAS381 V
R
= 40 V BAS381-TR3 or BAS381-TR Single diode Tape and reel
BAS382 V
R
= 50 V BAS382-TR3 or BAS382-TR Single diode Tape and reel
BAS383 V
R
= 60V BAS383-TR3 or BAS383-TR Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage
BAS381 V
R
40 V
BAS382 V
R
50 V
BAS383 V
R
60 V
Peak forward surge current t
p
= 1 s I
FSM
500 mA
Repetitive peak forward current I
FRM
150 mA
Forward continuous current I
F
30 mA
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
320 K/W
Junction temperature T
j
125 °C
Storage temperature range T
stg
- 65 to + 150 °C
BAS381, BAS382, BAS383
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 15-May-12
2
Document Number: 85503
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 2 - Reverse Current vs. Junction Temperature
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 0.1mA V
F
330 mV
I
F
= 1 mA V
F
410 mV
I
F
= 15 mA V
F
1000 mV
Reserve current V
R
= V
Rmax.
I
R
200 nA
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
1.6 pF
0
2
4
6
8
10
12
14
25 50 75 100 125 150
T
j
- Junction Temperature (°C)
15794
V
R
= 60 V
P
R
- Reverse Power Dissipation (mW)
R
thJA
= 540 K/W
P
R
V
R
- Limit at 100 %
P
R
- Limit at 100 % V
R
P
R
- Limit at 80 % V
R
0.1
100
1000
25 50 75 100 125 150
1
10
15795
V
R
= V
RRM
I - Reverse Current (µA)
R
T
j
- Junction Temperature (°C)
0 0.5 1 1.5 2.0
I- Forward Current (mA)
V
F
- Forward Voltage (V)
15796
F
T
j
= 25 °C
T
j
= 125 °C
0.1
1
10
100
1000
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1 1 10 100
V
R
- Reverse Voltage (V)
15797
C
D
- Diode Capacitance (pF)
f = 1 MHz
BAS381, BAS382, BAS383
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 15-May-12
3
Document Number: 85503
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Board for R
thJA
Definition (in mm)
PACKAGE DIMENSIONS in millimeters (inches): MicroMELF
25
2.5
10
0.71 1.3
1.27
9.9
24
0.152
0.355
95 10329
Cathode indification
surface plan1 (0.039)
glass
glass
surface plan
2 (0.079)
1.8 (0.071)
0.25 (0.010)
0.15 (0.006)
1.2 (0.047)
1.1 (0.043)
> R2.5 (0.098)
< 1.35 (0.053)
0.6 (0.024)
Foot print recommendation:
Reflow soldering Wave soldering
2.4 (0.094) 2.8 (0.110)
0.8 (0.031)0.8 (0.031) 0.9 (0.035) 0.9 (0.035)
1.2 (0.047)
0.8 (0.031)
1.4 (0.055)
1 (0.039)
Document no.:6.560-5007.01-4
Rev. 13 - Date: 07.June.2006
96 12072
Created - Date: 26.July.1996
*
*
The gap between plug and glass can
be either on cathode or anode side
P1-P3P4-P4

BAS382-TR

Mfr. #:
Buy BAS382-TR
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 50 Volt 30mA 500mA IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet