IXTT60N20L2 Datasheet IXTH60N20L2, IXTQ60N20L2, IXTT60N20L2 | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 200 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 200 V

V

GSS

Continuous ± 20 V

V

GSM

Transient ± 30 V

I

D25

T

C

= 25°C 60 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

150 A

I

A

T

C

= 25°C 60 A

E

AS

T

C

= 25°C 2 J

P

D

T

C

= 25°C 540 W

T

J

-55 to +150 °C

T

JM

+150 °C

T

stg

-55 to +150 °C

T

L

1.6mm (0.063in) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-247&TO-3P) 1.13/10 Nm/lb.in.

Weight TO-268 4.0 g

TO-3P 5.5 g

TO-247 6.0 g

N-Channel Enhancement Mode

Avalanche Rated

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 200 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250μA 2.5 4.5 V

I

GSS

V

GS

= ± 20V, V

DS

= 0V ±100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 5 μA

T

J

= 125°C 50 μA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 45 mΩ

Linear L2

TM

Power

MOSFET w/ Extended

FBSOA

IXTT60N20L2

IXTQ60N20L2

IXTH60N20L2

DS100203(10/09)

V

DSS

= 200V

I

D25

= 60A

R

DS(on)

≤≤

≤ 45m

ΩΩ

Ω

Advance Technical Information

Features

z

Designed for Linear Operation

z

International Standard Packages

z

Avalanche Rated

z

Guaranteed FBSOA at 75°C

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

Solid State Circuit Breakers

z

Soft Start Controls

z

Linear Amplifiers

z

Programmable Loads

z

Current Regulators

G = Gate D = Drain

S = Source Tab = Drain

TO-247(IXTH)

G

D

S

Tab

TO-3P (IXTQ)

Tab

D

G

S

TO-268 (IXTT)

G

S

Tab

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTT60N20L2 IXTQ60N20L2

IXTH60N20L2

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 0.5 • I

D25

, Note 1 35 44 53 S

C

iss

10.5 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 1080 pF

C

rss

255 pF

t

d(on)

26 ns

t

r

23 ns

t

d(off)

90 ns

t

f

18 ns

Q

g(on)

255 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

48 nC

Q

gd

90 nC

R

thJC

0.23 °C/W

R

thCS

(TO-247&TO-3P) 0.25 °C/W

Safe Operating Area Specification

Symbol Test Conditions Min. Typ. Max.

SOA V

DS

= 160V, I

D

= 1.88A, T

C

= 75°C, tp = 3s 300 W

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 1Ω (External)

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 60 A

I

SM

Repetitive, Pulse Width Limited by T

JM

240 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.4 V

t

rr

330 ns

I

RM

25.0 A

Q

RM

4.13 μC

I

F

= 30A, -di/dt = 100A/μs,

V

R

=

75V, V

GS

= 0V

TO-268 (IXTT) Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

e

∅ P

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-247 (IXTH) Outline

TO-3P (IXTQ) Outline

IXTT60N20L2 IXTQ60N20L2

IXTH60N20L2

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

DS

- Volts

I

D

- Amperes

V

GS

= 20V

14V

12V

10V

4

V

6

V

8

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

180

036912151821242730

V

DS

- Volts

I

D

- Amperes

V

GS

= 20V

14V

12V

10V

4

V

6

V

8

V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

10

20

30

40

50

60

0123456

V

DS

- Volts

I

D

- Amperes

V

GS

= 20V

12V

10V

8V

4

V

6V

Fig. 4. R

DS(on)

Normalized to I

D

= 30A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

3.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 60A

I

D

= 30A

Fig. 5. R

DS(on)

Normalized to I

D

= 30A Value vs.

Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0 20 40 60 80 100 120 140 160 180

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

10

20

30

40

50

60

70

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXTT60N20L2

IXTT60N20L2

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