IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK520N075T2
IXFX520N075T2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 65 105 S
C
iss
41 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 4150 pF
C
rss
530 pF
R
GI
Gate Input Resistance 1.36
t
d(on)
48 ns
t
r
36 ns
t
d(off)
80 ns
t
f
35 ns
Q
g(on)
545 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
DSS
177 nC
Q
gd
135 nC
R
thJC
0.12C/W
R
thCS
0.15 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 520 A
I
SM
Repetitive, Pulse Width Limited by T
JM
1600 A
V
SD
I
F
= 100A, V
GS
= 0V, Note 1 1.25 V
t
rr
150 ns
I
RM
7 A
Q
RM
357 nC
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 200A
R
G
= 1 (External)
I
F
= 150A, V
GS
= 0V
-di/dt = 100A/s
V
R
= 37.5V
Notes 1. Pulse test, t 300s, duty cycle, d 2%.
2. Includes lead resistance.
TO-264 Outline
PLUS247
TM
Outline
PINS:
1 - Gate
2,4 - Drain
3 - Source
PINS:
1 - Gate
2,4 - Drain
3 - Source
