0.01 0.1 1
6000
7000
8000
9000
10000
11000
12000
0.4 0.8 1.2 1.6
0
200
400
600
800
1000
0.001 0.01 0.1 1 10 100
0.00
0.02
0.04
0.06
0.08
0.10
I
TSM
[A]
I
T
[A]
V
T
[V]
t [s]
Z
thJC
[K/W]
2 3 4 5 6 7 8 9 011
10
5
10
6
I
2
t
[A
2
s]
t [ms]
I
T(AV)M
[A]
T
C
[°C]
0 25 50 75 100 125 150
0
200
400
600
800
1000
Fig. 1 Forward characteristics
Fig. 3 I
2
t versus time (1-10 ms)
t [s]
Fig. 6 Max. forward current
at case temperature
Fig. 2 Surge overload current
Fig. 8 Transient thermal impedance
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
0 200 400 600
0
200
400
600
800
I
T(AV)
[A]
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
I
G
[mA]
I
G
[mA]
Fig. 4 Gate trigger characteristics
Fig. 5 Gate controlled delay time
dc =
1
0.5
0.4
0.33
0.17
0.08
R
thi
[K/W] t
i
[s]
0.0031 0.00054
0.0168 0.0098
0.0390 0.54
0.0061 12
30°
60°
120°
180°
DC
R
thHA
0.02
0.04
0.06
0.08
0.1
0.2
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
V
G
[V]
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
I
GD
, T
VJ
= 125°C
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
1
2
3
4
6
5
0.01 0.1 1 10
1
10
100
t
gd
[µs]
T
VJ
= 25°C
Limit
typ.
125°C
140°C
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20170112eData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
