2N4416/2N4416A/SST4416
Vishay Siliconix
www.vishay.com
4
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
5
0 1.0
4
3
2
1
0
V
DS
Drain-Source Voltage (V)
0.2 0.4 0.6 0.8
V
GS
= 0 V
V
GS(off)
= 2 V
Output Characteristics
5
0 1.0
4
3
2
1
0
V
DS
Drain-Source Voltage (V)
0.2 0.4 0.6 0.8
V
GS
= 0 V
V
GS(off)
= 3 V
0.4 V
0.2 V
0.6 V
0.8 V
1.0 V
1.2 V
1.4 V
1.2 V
1.5 V
1.8 V
2.1 V
0.3 V
0.9 V
0.6 V
10
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
Transfer Characteristics
V
GS(off)
= 2 V
T
A
= 55_C
125_C
Transfer Characteristics
T
A
= 55_C
125_C
V
GS(off)
= 3 V
V
GS
Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
V
GS(off)
= 2 V
T
A
= 55_C
125_C
V
GS
Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltgage
T
A
= 55_C
125_C
V
GS(off)
= 3 V
0
8
6
4
2
0 20.4 0.8 1.2 1.6
10
0
8
6
4
2
0 30.6 1.2 1.8 2.4
10
0
8
6
4
2
0 20.4 0.8 1.2 1.6
10
0
8
6
4
2
0 30.6 1.2 1.8 2.4
V
DS
= 10 V
V
DS
= 10 V
V
DS
= 10 V
f = 1 kHz
V
DS
= 10 V
f = 1 kHz
25_C
25_C
25_C
25_C
g
fs
Forward Transconductance (mS)
g
fs
Forward Transconductance (mS)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
2N4416/2N4416A/SST4416
Vishay Siliconix
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
www.vishay.com
5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
Drain Current (mA) I
D
Drain Current (mA)
On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
0.1 1 10
T
A
= 25_C
3 V
V
GS(off)
= 2 V
100.1
A
V
+
g
fs
R
L
1 ) R
L
g
os
Assume V
DD
= 15 V, V
DS
= 5 V
R
L
+
10 V
I
D
V
GS(off)
= 2 V
3 V
300
0
240
180
120
60
100
0
80
60
40
20
1
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
f = 1 MHz
V
DS
= 0 V
10 V
V
DS
= 0 V
10 V
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
f = 1 MHz
Input Admittance Forward Admittance
100
10
1
0.1
100 1000
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
(mS)
100
10
1
0.1
100 1000
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
(mS)
f Frequency (MHz) f Frequency (MHz)
5
0
4
3
2
1
0 204 8 12 16
3
0
2.4
1.8
1.2
0.6
0 204 8 12 16
200 500 200 500
b
is
g
is
b
fs
g
fs
r
DS(on)
Drain-Source On-Resistance ( Ω )
A
V
Voltage Gain
C
iss
Input Capacitance (pF)
C
rss
Reverse Feedback Capacitance (pF)
2N4416/2N4416A/SST4416
Vishay Siliconix
www.vishay.com
6
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance
Output Admittance
10
1
0.1
0.01
100 1000
(mS)
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
b
rs
g
rs
10
1
0.1
0.01
100 1000
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
b
os
g
os
(mS)
f Frequency (MHz)
f Frequency (MHz)
200 500
200 500
10 100 1 k 100 k10 k
20
0
16
12
8
4
Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
V
DS
= 10 V
I
D
= 5 mA
V
GS
= 0 V
0.1 1 10
T
A
= 55_C
125_C
V
GS(off)
= 3 V
I
D
Drain Current (mA)f Frequency (Hz)
20
0
16
12
8
4
V
DS
= 10 V
f = 1 kHz
V
DG
Drain-Gate Voltage (V)
I
D
Drain Current (mA)
Gate Leakage Current
0.1 mA
I
GSS
@ 25_C
I
GSS
@
125_C
Common-Source Forward
Transconductance vs. Drain Current
0.1 1 10
10
8
0
V
GS(off)
= 3 V
T
A
= 55_C
125_C
012841620
6
4
2
V
DS
= 10 V
f = 1 kHz
5 mA
1 mA
0.1 mA
T
A
= 25_C
T
A
= 125_C
I
G
@ I
D
= 5 mA
1 mA
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
100 nA
25_C
25_C
en Noise Voltage nV / Hz
g
os
Output Conductance (µS) g
fs
Forward Transconductance (mS)
I
G
Gate Leakage
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Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70242.

2N4416

Mfr. #:
Manufacturer:
InterFET
Description:
JFET JFET N-Channel -30V 10mA 300mW 2mW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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