OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BZT52C39S RRG

P1-P3P4-P6P7-P7
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
4
Version: I1804
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Typical Forward Characteristics
Fig.
2 Zener Breakdown Characteristics
Fig.
3 Zener Breakdown Characteristics
Fig.4 Power Dissipation Curve
1
10
100
1000
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
T
A
=25
o
C
0.01
0.1
1
10
100
0 1 2 3 4 5 6 7 8 9 10 11 12
T
A
=25
o
C
0.01
0.1
1
10
100
15 25 35 45 55 65 75 85
0
100
200
300
0 50 100 150 200
Zener Current (mA)
Forward Voltage (V)
Zener Current (mA)
Zener Voltage (V)
Power Dissipation (mW)
Ambient Temperature (
o
C)
Zener Voltage (V)
Forward Current (mA)
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
5
Version: I1804
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5
Typical Capacitance
Fig.6
Effect of Zener Voltage on Impedence
1
10
100
1000
1 10 100
1V Bias
Bias at 50% of
V
Z
(Nom)
1
10
100
1000
1 10 100
I
Z
=5mA
I
Z
=20mA
I
Z
=1mA
Dynamic Impedence(Ohm)
Zener Voltage (V)
Zener Voltage (V)
Capacitance (pF)
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
6
Version: I1804
PACKAGE OUTLINE DIMENSION
SUGGEST PAD LAYOUT
SOD-323F
DIM.
Unit (mm) Unit (inch)
Min Max Min Max
A 1.15 1.35 0.045 0.053
B 2.30 2.80 0.091 0.110
C 0.25 0.40 0.010 0.016
D 1.60 1.80 0.063 0.071
E 0.80 1.10 0.031 0.043
F 0.05 0.25 0.002 0.010
DIM.
Unit (mm) Unit (inch)
Typ. Typ.
A 0.63 0.025
B 0.83 0.033
C 1.60 0.063
D 2.86 0.113
P1-P3P4-P6P7-P7

BZT52C39S RRG

Mfr. #:
Buy BZT52C39S RRG
Manufacturer:
Taiwan Semiconductor
Description:
Zener Diodes Zener diode 39v, 200mW 5%
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet