4
AT49BV/LV160(T)/161(T)
1427L–FLASH–02/03
Block Diagram
IDENTIFIER
REGISTER
STATUS
REGISTER
DATA
COMPARATOR
OUTPUT
MULTIPLEXER
OUTPUT
BUFFER
INPUT
BUFFER
COMMAND
REGISTER
DATA
REGISTER
Y-GATING
WRITE STATE
MACHINE
PROGRAM/ERASE
VOLTAGE SWITCH
CE
WE
OE
RESET
BYTE
RDY/BUSY
VPP
VCC
GND
Y-DECODER
X-DECODER
INPUT
BUFFER
ADDRESS
LATCH
I/O0 - I/O15/A-1
A0 - A19
MAIN
MEMORY
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AT49BV/LV160(T)/161(T)
1427L–FLASH–02/03
Device
Operation
READ: The AT49BV/LV16X(T) is accessed like an EPROM. When CE and OE are low and
WE
is high, the data stored at the memory location determined by the address pins are
asserted on the outputs. The outputs are put in the high-impedance state whenever CE
or OE
is high. This dual-line control gives designers flexibility in preventing bus contention.
COMMAND SEQUENCES: When the device is first powered on, it will be reset to the read or
standby mode, depending upon the state of the control line inputs. In order to perform other
device functions, a series of command sequences are entered into the device. The command
sequences are shown in the “Command Definition in Hex” table on page 13 (I/O8 - I/O15 are
don’t care inputs for the command codes). The command sequences are written by applying a
low pulse on the WE
or CE input with CE or WE low (respectively) and OE high. The address
is latched on the falling edge of CE
or WE, whichever occurs last. The data is latched by the
first rising edge of CE
or WE. Standard microprocessor write timings are used. The address
locations used in the command sequences are not affected by entering the command
sequences.
RESET: A RESET
input pin is provided to ease some system applications. When RESET is at
a logic high level, the device is in its standard operating mode. A low level on the RESET
input
halts the present device operation and puts the outputs of the device in a high-impedance
state. When a high level is reasserted on the RESET
pin, the device returns to the read or
standby mode, depending upon the state of the control inputs.
ERASURE: Before a byte/word can be reprogrammed, it must be erased. The erased state of
memory bits is a logical “1”. The entire device can be erased by using the Chip Erase com-
mand or individual sectors can be erased by using the Sector Erase command.
CHIP ERASE: The entire device can be erased at one time by using the six-byte chip erase
software code. After the chip erase has been initiated, the device will internally time the erase
operation so that no external clocks are required. The maximum time to erase the chip is t
EC
.
If the sector lockdown has been enabled, the chip erase will not erase the data in the sector
that has been locked out; it will erase only the unprotected sectors. After the chip erase, the
device will return to the read or standby mode.
SECTOR ERASE: As an alternative to a full chip erase, the device is organized into 39 sec-
tors (SA0 - SA38) that can be individually erased. The Sector Erase command is a six-bus
cycle operation. The sector address is latched on the falling WE
edge of the sixth cycle while
the 30H data input command is latched on the rising edge of WE
. The sector erase starts after
the rising edge of WE
of the sixth cycle. The erase operation is internally controlled; it will
automatically time to completion. The maximum time to erase a sector is t
SEC
. When the sec-
tor programming lockdown feature is not enabled, the sector will erase (from the same Sector
Erase command). An attempt to erase a sector that has been protected will result in the oper-
ation terminating in 2 µs.
BYTE/WORD PROGRAMMING: Once a memory block is erased, it is programmed (to a logi-
cal “0”) on a byte-by-byte or on a word-by-word basis. Programming is accomplished via the
internal device command register and is a four-bus cycle operation. The device will automati-
cally generate the required internal program pulses.
6
AT49BV/LV160(T)/161(T)
1427L–FLASH–02/03
Any commands written to the chip during the embedded programming cycle will be ignored. If
a hardware reset happens during programming, the data at the location being programmed
will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase
operations can convert “0”s to “1”s. Programming is completed after the specified t
BP
cycle
time. The Data
Polling feature or the Toggle Bit feature may be used to indicate the end of a
program cycle. If the erase/program status bit is a “1”, the device was not able to verify that the
erase or program operation was performed successfully.
VPP PIN: The circuitry of the AT49BV/LV16X(T) is designed so that the device can be pro-
grammed or erased from the V
CC
power supply or from the VPP input pin. When V
PP
is greater
than 1.65V and less than or equal to the VCC pin, the device selects the V
CC
supply for pro-
gramming and erase operations. When the VPP pin is greater than the V
CC
supply, the device
will select the V
PP
input as the power supply for programming and erase operations. The
device will allow for some variations between the V
PP
input and the V
CC
power supply in its
selection of V
CC
or V
PP
for program or erase operations. If the VPP pin is within 0.3V of V
CC
for
2.65V < V
CC
< 3.6V, then the program or erase operations will use V
CC
and disregard the V
PP
input signal. When the V
PP
signal is used for program and erase operations, the V
PP
must be
in the 5V ± 0.5V or 12V ± 0.5V range to ensure proper operation. The V
pp
pin cannot be left
floating.
PROGRAM/ERASE STATUS: The device provides several bits to determine the status of a
program or erase operation: I/O2, I/O3, I/O5, I/O6 and I/O7. The “Status Bit Table” on page 12
and the following four sections describe the function of these bits. To provide greater flexibility
for system designers, the AT49BV/LV16X(T) contains a programmable configuration register.
The configuration register allows the user to specify the status bit operation. The configuration
register can be set to one of two different values, “00” or “01”. If the configuration register is set
to “00”, the part will automatically return to the read mode after a successful program or erase
operation. If the configuration register is set to a “01”, a Product ID Exit command must be
given after a successful program or erase operation before the part will return to the read
mode. It is important to note that whether the configuration register is set to a “00” or to a “01”,
any unsuccessful program or erase operation requires using the Product ID Exit command to
return the device to read mode. The default value (after power-up) for the configuration regis-
ter is “00”. Using the four-bus cycle Set Configuration Register command as shown in the
“Command Definition in Hex” table on page 13, the value of the configuration register can be
changed. Voltages applied to the RESET
pin will not alter the value of the configuration regis-
ter. The value of the configuration register will affect the operation of the I/O7 status bit as
described below.
DATA
POLLING: The AT49BV/LV16X(T) features Data Polling to indicate the end of a pro-
gram cycle. If the status configuration register is set to a “00”, during a program cycle an
attempted read of the last byte/word loaded will result in the complement of the loaded data on
I/O7. Once the program cycle has been completed, true data is valid on all outputs and the
next cycle may begin. During a chip or sector erase operation, an attempt to read the device
will give a “0” on I/O7. Once the program or erase cycle has completed, true data will be read
from the device. Data
Polling may begin at any time during the program cycle. Please see
“Status Bit Table” on page 12 for more details.

AT49BV160-90TI

Mfr. #:
Manufacturer:
Description:
IC FLASH 16M PARALLEL 48TSOP
Lifecycle:
New from this manufacturer.
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