BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 19 March 2010 4 of 13
NXP Semiconductors
BAV23 series
Dual high-voltage switching diodes
[1] Single diode loaded.
[2] Double diode loaded.
[3] T
j
=25C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
[1] When switched from I
F
= 10 mA to I
R
=10mA; R
L
= 100 ; measured at I
R
=1mA.
Per device
P
tot
total power dissipation T
amb
25 C
[4]
-250mW
T
j
junction temperature - 150 C
T
amb
ambient temperature 65 +150 C
T
stg
storage temperature 65 +150 C
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
- - 360 K/W
Table 8. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage I
F
=100mA --1.0V
I
F
=200mA --1.25V
I
R
reverse current V
R
= 200 V - - 100 nA
V
R
=200V; T
j
= 150 C - - 100 A
C
d
diode capacitance f = 1 MHz; V
R
=0V --2pF
t
rr
reverse recovery time
[1]
--50ns
