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UF10BCT-E3/4W

P1-P3P4-P5
U10xCT-E3, UF10xCT-E3, UB10xCT-E3
www.vishay.com
Vishay General Semiconductor
Revision: 23-Oct-13
1
Document Number: 88967
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Ultrafast Rectifier
FEATURES
• Power pack
• Oxide planar chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF max. peak of
245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AB and ITO-220AB package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, DC/DC converters or
polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB and TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5.0 A
V
RRM
100 V to 200 V
I
FSM
55 A
t
rr
25 ns
V
F
0.89 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations Dual Common Cathode
TO-220AB
U10xCT
1
2
3
UB10xCT
1
2
K
TO-263AB
UF10xCT
ITO-220AB
1
2
3
CASE
PIN 2
PIN 1
PIN 3
PIN 1
PIN 2
K
HEATSINK
PIN 2
PIN 1
PIN 3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL U(F,B)10BCT U(F,B)10CCT U(F,B)10DCT UNIT
Max. repetitive peak reverse voltage V
RRM
100 150 200 V
Max. average forward rectified current (Fig. 1)
total device
I
F(AV)
10
A
per diode 5.0
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I
FSM
55 A
Electrostatic discharge capacitor voltage,
human body model: C = 150 pF, R = 1.5 k:(contact mode)
V
C
8kV
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min per diode
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
U10xCT-E3, UF10xCT-E3, UB10xCT-E3
www.vishay.com
Vishay General Semiconductor
Revision: 23-Oct-13
2
Document Number: 88967
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width d 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Max. instantaneous forward voltage per diode
(1)
I
F
= 3.0 A
T
J
= 25 °C
V
F
0.97 -
V
I
F
= 5.0 A 1.05 1.10
I
F
= 3.0 A
T
J
= 150 °C
0.79 -
I
F
= 5.0 A 0.89 0.95
Max. reverse current per diode
(2)
rated V
R
T
J
= 25 °C
I
R
0.5 5.0
μA
T
J
= 100 °C 100 200
Max. reverse recovery time per diode
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
13 20
ns
I
F
= 1.0 A, dI/dt = 100 A/μs,
V
R
= 30 V, I
rr
= 0.1 IRM
19.7 25
Max. stored charge per diode
I
F
= 2 A, dI/dt = 20 A/μs,
V
R
= 30 V, I
rr
= 0.1 IRM
Q
rr
39nC
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL U10XCT UF10XCT UB10XCT UNIT
Typical thermal resistance per diode
R
TJA
25 25 25
°C/W
R
TJC
5.3 7.5 5.3
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB U10DCT-E3/4W 1.87 4W 50/tube Tube
ITO-220AB UF10DCT-E3/4W 1.77 4W 50/tube Tube
TO-263AB UB10DCT-E3/4W 1.31 4W 50/tube Tube
TO-263AB UB10DCT-E3/8W 1.31 8W 800/reel Tape and reel
12
10
8
6
4
2
0
0 25 50 75 100 125 150
Resistive or Inductive Load
Average Forward Rectified Current (A)
Case Temperature (°C)
U(B)10xCT
UF10xCT
6
5
4
3
2
1
0
0123456
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = 0.2
D = t
p
/T t
p
T
U10xCT-E3, UF10xCT-E3, UB10xCT-E3
www.vishay.com
Vishay General Semiconductor
Revision: 23-Oct-13
3
Document Number: 88967
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Max. Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
100
10
1
110
100
Number of Cycles
Peak Forward Surge Current (A)
T
J
= T
J
max.
10 ms Single Half Sine-Wave
100
10
1
0.1
0.1 0.5 0.9 1.3 1.7 2.1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
10 000
1000
100
10
10 20 30 40 50 60 70 80 90 100
1
0.1
Percent of Rated Peak Reverse Voltage (%)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Instantaneous Reverse Current (μA)
100
10
1
0.1 1
10
100
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Junction Capacitance (pF)
P1-P3P4-P5

UF10BCT-E3/4W

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Buy UF10BCT-E3/4W
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 100 Volt 10 Amp 20ns Dual Common Cathode
Lifecycle:
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