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FMEN-210B
P1-P3
P4-P5
SANKEN ELECTR
IC CO., LTD.
FM
EN
-
210B
081121
1
/
5
61426-
01
1.
Scope
The present specificatio
ns shall apply to
an FMEN
-
210B
.
2.
Outline
T
ype
Silicon Schottky
Barrier Dio
de
Structure
Resin Molded
Applications
High Frequency
Rectification
3.
Flammability
UL94V
-
0(Equivalent)
SANKEN ELECTR
IC CO., LTD.
FM
EN
-
210B
081121
2
/
5
61426-
01
4.
Absolute maximum ratin
gs
N
o.
Item
Symbol
Unit
Rati
ng
Conditions
1
T
ransient P
eak Reverse V
oltage
V
RSM
V
15
0
2
Peak Reverse
V
oltage
V
RM
V
15
0
3
A
ve
rage Forward Current
I
F(A
V)
A
10
Refer to Derating of 7
4
Peak Surge Forw
ard Current
I
FSM
A
100
10
msec.
Half sinewave, one shot
5
I
2
t Limiting
V
alue
I
2
t
A
2
s
50
1msec
≤
t
≤
10
msec
6
Junction T
emperature
T
j
°C
-
40
~+150
7
Storage T
emperature
T
stg
°C
-
40
~+150
No.1,2,4&5 show ratings per
one chip.
5.
Electrical characteristic
s (T
a=25
°C
,
unless other
wise specified)
N
o.
Item
Symbol
Unit
V
alue
Conditions
1
Fo
rward V
oltage Drop
V
F
V
0.92
max.
I
F
=5.0A
2
Reverse Leakage Current
I
R
uA
10
0 max.
V
R
=V
RM
3
Reverse
Leakage
Current
Under
High T
emperature
H
・
I
R
mA
25 max.
V
R
=V
RM
, T
j
=150
°C
4
Thermal Resistance
R
th(j
-
c)
°C
/W
4.0 max.
Between Junction and case
No
.1,2&3
show characteristics per o
ne chip.
SANKEN ELECTR
IC CO., LTD.
FM
EN
-
210B
081121
3
/
5
61426-
01
6.
Characteristics
I
F(A
V)
- P
F
P
F
(W)
Forward Power Dissipation (W)
I
F(A
V)
(A)
A
verage Forward Current (A)
V
R
- P
R
P
R
(W)
Reverse Power Dissipation (W)
V
R
(V)
Reverse V
oltage (V)
0
5
10
0
50
100
150
0
5
10
0
5
10
Tj=150
°C
t
T
t/T=1/6
Tj=150
°C
t
T
1-t/T=5/6
sinewave
1-t/T=2/3
1-t/T=1/2
DC
t/T=1/2
t/T=1/3,sinewave
P1-P3
P4-P5
FMEN-210B
Mfr. #:
Buy FMEN-210B
Manufacturer:
Description:
Diode Schottky 150V 10A 3-Pin(3+Tab) TO-220F
Lifecycle:
New from this manufacturer.
Delivery:
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FMEN-210B