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NRVBM110LT1G

P1-P3P4-P5
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 2
1 Publication Order Number:
MBRM110L/D
MBRM110LT1G,
NRVBM110LT1G,
NRVBM110LT3G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky POWERMITE
employs the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the POWERMITE
has the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles, 1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “ORing” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Ultra Low V
F
1st in Marketplace with a 10 V
R
Schottky Rectifier
Low Profile − Maximum Height of 1.1 mm
Small Footprint − Footprint Area of 8.45 mm
2
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings:
Human Body Model > 4000 V (Class 3)
Machine Model > 400 V (Class C)
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:
POWERMITE
is JEDEC Registered as D0−216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 62 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 10 VOLTS
Device Package Shipping
†
ORDERING INFORMATION
MBRM110LT1G POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
MBRM110LT3G POWERMITE
(Pb−Free)
12,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
POWERMITE
CASE 457
PLASTIC
CATHODE
ANODE
MARKING DIAGRAM
M = Date Code
1L1 = Device Code
G = Pb−Free Package
http://onsemi.com
NRVBM110LT1G POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
NRVBM110LT3G POWERMITE
(Pb−Free)
12,000 /
Tape & Reel
M
1L1G
12
MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
10 V
Average Rectified Forward Current
(T
L
= 115C, R
q
JL
= 35C/W)
I
O
1.0
A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
I
FSM
50
A
Storage Temperature T
stg
−55 to 125 C
Operating Junction Temperature T
J
−55 to 125 C
Voltage Rate of Change
(Rated V
R
, T
J
= 25C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
R
tjl
R
tjtab
R
tja
35
23
277
C/W
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
V
F
T
J
= 25C T
J
= 100C
V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 2.0 A)
0.280
0.365
0.415
0.175
0.275
0.325
Maximum Instantaneous Reverse Current (Note 2)
I
R
T
J
= 25C T
J
= 100C
mA
(V
R
= 5.0 V)
(V
R
= 10 V)
0.2
0.5
30
60
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%.
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
0.1
0.30.1 0.2 0.4 0.6
0.5
0.7
100C
T
J
= 125C
75C 25C
−55C
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
0.1
0.30.1 0.2 0.4 0.6
0.5
0.7
100C
T
J
= 125C
75C
25C −55C
MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G
http://onsemi.com
3
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
0
V
R
, REVERSE VOLTAGE (VOLTS)
1E−5
1E−6
21436587109
1E−3
1E−4
1E−1
1E−2
100C
T
J
= 125C
75C
25C
0
V
R
, REVERSE VOLTAGE (VOLTS)
1E−5
21436587109
1E−3
1E−4
1E−1
1E−2
100C
T
J
= 125C
75C
25C
I
R
, INSTANTANEOUS REVERSE VOLTAGE (VOLTS)
I
R
, INSTANTANEOUS REVERSE VOLTAGE (VOLTS)
1E+0
Figure 5. Current Derating − Junction to Lead
200
T
L
, LEAD TEMPERATURE (C)
1.8
1.2
1.0
0.8
0.2
0
40
, AVERAGE FORWARD CURRENT (AMPS)I
F
1.4
1.6
SQUARE WAVE
dc
0.6
0.4
60 80 100 120 140
Figure 6. Typical Capacitance Figure 7. Forward Power Dissipation
0
V
R
, REVERSE VOLTAGE (VOLTS)
300
100
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.60
0.1
0.05
0
C, CAPACITANCE (pF)
213 0.80.2 0.4645
0.15
0.2
71089
150
200
250
500
350
400
450
T
J
= 25C
f = 1 MHz
1.4 1.61.0 1.2 1.8
0.3
0.25
0.35
0.4
0.45
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
SQUARE WAVE
dc
P1-P3P4-P5

NRVBM110LT1G

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Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers REC 1A10V PWRMITE SCHTKY
Lifecycle:
New from this manufacturer.
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