IPG15N06S3L-45
OptiMOS
®
-T Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
one channel active
I
D
T
C
=25 °C, V
GS
=10 V
1)
15 A
T
C
=100 °C,
V
GS
=10 V
2)
12
Pulsed drain current
2)
one channel active
I
D,pulse
T
C
=25 °C
60
Avalanche energy, single pulse
2, 5)
E
AS
I
D
=7.5A
47 mJ
Avalanche current, single pulse
5)
I
AS
-
15 A
Gate source voltage
4)
V
GS
- ±16 V
Power dissipation
one channel active
P
tot
T
C
=25 °C
21 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
55 V
R
DS
on
,max
5)
2 x 45
mΩ
I
D
15 A
Product Summary
Type Package Marking
IPG15N06S3L-45 PG-TDSON-8-4 3N03L45
PG-TDSON-8-4
Rev. 1.0 page 1 2008-09-23