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SI8406DB-T2-E1

P1-P3P4-P6P7-P8
Si8406DB
www.vishay.com
Vishay Siliconix
S15-0932-Rev. B, 20-Apr-15
4
Document Number: 62530
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA
0.00
0.02
0.04
0.06
0.08
012345
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 1 A
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
10 s
100 μs
Limited by R
DS(on)
*
1 ms
T
A
= 25 °C
BVDSS Limited
10 ms
100 ms,1 s
DC
Si8406DB
www.vishay.com
Vishay Siliconix
S15-0932-Rev. B, 20-Apr-15
5
Document Number: 62530
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating* Power Derating
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
4
8
12
16
20
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Ambient Temperature (°C)
Package Limited
0
3
6
9
12
15
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
Si8406DB
www.vishay.com
Vishay Siliconix
S15-0932-Rev. B, 20-Apr-15
6
Document Number: 62530
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62530
.
10
-3
10
-2
000101110
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
10
-3
10
-2
10
-1
10
-4
1
0.1
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
0.05
Single Pulse
P1-P3P4-P6P7-P8

SI8406DB-T2-E1

Mfr. #:
Buy SI8406DB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V Vds 8V Vgs MICRO FOOT 1.5 x 1
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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