IXGT20N120BD1 Datasheet IXGT20N120BD1 | P1-P3

TO-247AD

(IXGH)

G

C

E

G = Gate C = Collector

E = Emitter TAB = Collector

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 1200 V

V

CGR

T

J

= 25°C to 150°C; R

GE

= 1 MΩ 1200 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C40A

I

C110

T

C

= 110°C20A

I

CM

T

C

= 25°C, 1 ms 100 A

SSOA V

GE

= 15 V, T

J

= 125°C, R

G

= 10 Ω I

CM

= 80 A

(RBSOA) Clamped inductive load @0.8 V

CES

P

C

T

C

= 25°C 190 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting torque (TO-247) 1.13/10 Nm/lb.in.

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

Maximum tab temperature 260 °C

soldering SMD devices for 10s

Weight TO-247AD/TO-268 6/4 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

BV

CES

I

C

= 1 µA, V

GE

= 0 V 1200 V

V

GE(th)

I

C

= 250 µA, V

CE

= V

GE

2.5 5.0 V

I

CES

V

CE

= V

CES

T

J

= 25°C 150 µA

V

GE

= 0 V T

J

= 125°C50 µA

I

GES

V

CE

= 0 V, V

GE

= ±20 V ±100 nA

V

CE(sat)

I

C

= 20A

,

V

GE

= 15 V 2.9 3.4 V

Note 2 T

J

=125°C 2.8 V

Features

z

International standard packages:

JEDEC TO-247AD & TO-268

z

IGBT and anti-parallel FRED for

resonant power supplies

- Induction heating

- Rice cookers

z

MOS Gate turn-on

- drive simplicity

z

Fast Recovery Expitaxial Diode (FRED)

- soft recovery with low I

RM

Advantages

z

Saves space (two devices in one

package)

z

Easy to mount with 1 screw

(isolated mounting screw hole)

z

Reduces assembly time and cost

DS98985E(07/03)

TO-268

(IXGT)

G

C (TAB)

E

High Voltage IGBT with Diode

IXGH 20N120BD1

IXGT 20N120BD1

TAB

V

CES

= 1200 V

I

C25

=40A

V

CE(sat)

= 3.4 V

t

fi(typ)

= 160 ns

Preliminary Data Sheet

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 20N120BD1

IXGT 20N120BD1

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

TO-247 AD Outline

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

I

C

= 20A; V

CE

= 10 V, 12 18 S

Note 2.

C

ies

1700 pF

C

oes

V

CE

= 25 V, V

GE

= 0 V, f = 1 MHz 105 pF

C

res

39 pF

Q

g

72 nC

Q

ge

I

C

= 20A, V

GE

= 15 V, V

CE

= 0.5 V

CES

12 nC

Q

gc

27 nC

t

d(on)

25 ns

t

ri

15 ns

t

d(off)

150 280 ns

t

fi

160 320 ns

E

off

2.1 3.5 mJ

t

d(on)

25 ns

t

ri

18 ns

E

on

1.9 mJ

t

d(off)

270 ns

t

fi

360 ns

E

off

3.5 mJ

R

thJC

0.65 K/W

R

thCK

(TO-247) 0.25 K/W

Reverse Diode (FRED) Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

V

F

I

F

= 10 A, V

GE

= 0 V 3.3 V

I

F

T

C

= 90°C10A

I

RM

I

F

= 10 A; -di

F

/dt = 400 A/µs, V

R

= 600 V 14 A

t

rr

V

GE

= 0 V; T

J

= 125°C 120 ns

t

rr

I

F

= 1 A; -di

F

/dt = 100 A/µs; V

R

= 30 V, V

GE

= 0 V 40 ns

R

thJC

2.5 K/W

Inductive load, T

J

= 125

°°

°C

I

C

= 20A; V

GE

= 15 V

V

CE

= 0.8 V

CES

; R

G

= R

off

= 10 Ω

Note 1

Inductive load, T

J

= 25

°°

°C

I

C

= 20 A; V

GE

= 15 V

V

CE

= 0.8 V

CES

; R

G

= R

off

= 10 Ω

Note 1.

TO-268 Outline

Notes: 1. Switching times may increase for V

CE

(Clamp) > 0.8 • V

CES

,

higher T

J

or increased R

G

.

2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201

A

1

2.7 2.9 .106 .114

A

2

.02 .25 .001 .010

b 1.15 1.45 .045 .057

b

2

1.9 2.1 .75 .83

C .4 .65 .016 .026

D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632

E

1

13.3 13.6 .524 .535

e 5.45 BSC .215 BSC

H 18.70 19.10 .736 .752

L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055

L2 1.00 1.15 .039 .045

L3 0.25 BSC .010 BSC

L4 3.80 4.10 .150 .161

Fig. 2. Extended Output Characteristics

@ 25 deg. C

0

20

40

60

80

10 0

12 0

14 0

16 0

024681012141618

V

CE

- Volts

I

C

- Amperes

V

G E

= 1 5V

9V

1 1V

7V

5V

13 V

Fig. 3. Output Characteristics

@ 125 Deg. C

0

5

10

15

20

25

30

35

40

0.511.522.533.544.55

V

CE

- Volts

I

C

- Amperes

V

G E

= 1 5V

1 3V

1 1 V

5V

7V

9V

Fig. 1. Output Characteristics

@ 25 Deg. C

0

5

10

15

20

25

30

35

40

1 1.5 2 2.5 3 3.5 4 4.5 5

V

CE

- Volts

I

C

- Amperes

V

G E

= 1 5V

1 3V

1 1 V

5V

7V

9V

Fig. 5. Input Admittance

0

10

20

30

40

50

60

70

80

345678910

V

GE

- Volts

I

C

- Amperes

T

J

= -40ºC

25ºC

1 25ºC

Fig. 6. Transconductance

0

3

6

9

12

15

18

21

24

27

0 1020304050607080

I

C

- Amperes

G

f s

- Siemens

T

J

= -40ºC

25ºC

1 25ºC

Fig. 4. Temperature Dependence of V

CE(sat)

0.7

0.8

0.9

1

1. 1

1. 2

1. 3

1. 4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE (sat)

- Normalize

d

I

C

= 40A

I

C

= 20A

I

C

= 1 0A

V

G E

= 1 5V

IXGH 20N120BD1

IXGT 20N120BD1

IXGT20N120BD1

IXGT20N120BD1

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