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MBR6045R

P1-P2
V
RRM
= 20 V - 100 V
I
F
= 60 A
Features
• High Surge Capability DO-5 Package
• Types up to 100 V V
RRM
Parameter Symbol MBR6045 (R) MBR6060 (R) Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
45 60 V
Silicon Power
Schottk
y
Diode
MBR6045 thru MBR60100R
MBR60100 (R)
80
MBR6080 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
100
pp g
RMS reverse voltage
V
RMS
32 42 V
DC blocking voltage
V
DC
45 60 V
Continuous forward current
I
F
60 60 A
Operating temperature
T
j
-65 to 150 -65 to 150 °C
Storage temperature
T
stg
-65 to 175 -65 to 175 °C
Parameter Symbol MBR6045 (R) MBR6060(R) Unit
Diode forward voltage 0.65 0.75
55
150 150
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
1.0 1.0 °C/W
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
150
A700
V
R
= 20 V, T
j
= 25 °C
I
F
= 60 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
50
700 700
-65 to 175
60 60
700
-65 to 175
MBR60100 (R)
55
MBR6080 (R)
1.0
V
R
= 20 V, T
j
= 125 °C
1.0
0.84 0.84
150
mA
V
-65 to 150 -65 to 150
T
C
= 25 °C, t
p
= 8.3 ms
70
10080
www.genesicsemi.com
1
MBR6045 thru MBR60100R
www.genesicsemi.com
2
P1-P2

MBR6045R

Mfr. #:
Buy MBR6045R
Manufacturer:
GeneSiC Semiconductor
Description:
Schottky Diodes & Rectifiers 45V - 60A Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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