MMDT2222A-7 Datasheet MMDT2222A-7 | P1-P3

DS30125 Rev. 8 - 2 1 of 4 MMDT2222A

www.diodes.com

ã Diodes Incorporated

· Epitaxial Planar Die Construction

· Complementary PNP Type Available

(MMDT2907A)

· Ultra-Small Surface Mount Package

· Available in Lead Free/RoHS Compliant Version (Note 3)

Features

Maximum Ratings

@ T

A

= 25°C unless otherwise specified

A

M

J

L

D

B

C

H

K

G

F

C

2

C

2

B

1

B

1

E

1

E

1

E

2

E

2

B

2

B

2

C

1

C

1

Mechanical Data

· Case: SOT-363

· Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

· Moisture Sensitivity: Level 1 per J-STD-020C

· Terminals: Solderable per MIL-STD-202, Method 208

· Also Available in Lead Free Plating (Matte Tin Finish

annealed over Alloy 42 leadframe). Please see Ordering

Information, Note 6, on Page 2

· Terminal Connections: See Diagram

· Marking (See Page 2): K1P

· Ordering & Date Code Information: See Page 2

· Weight: 0.006 grams (approx.)

MMDT2222A

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Characteristic Symbol MMDT2222A Unit

Collector-Base Voltage

V

CBO

75 V

Collector-Emitter Voltage

V

CEO

40 V

Emitter-Base Voltage

V

EBO

6.0 V

Collector Current - Continuous (Note 1)

I

C

600 mA

Power Dissipation (Note 1, 2)

P

d

200

mW

Thermal Resistance, Junction to Ambient (Note 1)

R

qJA

625 °C/W

Operating and Storage and Temperature Range

T

j

,T

STG

-55 to +150 °C

Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Maximum combined dissipation.

3. No purposefully added lead.

SOT-363

Dim Min Max

A

0.10 0.30

B

1.15 1.35

C

2.00 2.20

D

0.65 Nominal

F

0.30 0.40

H

1.80 2.20

J

¾ 0.10

K

0.90 1.00

L

0.25 0.40

M

0.10 0.25

a

0° 8°

All Dimensions in mm

SPICE MODEL: MMDT2222A

DS30125 Rev. 8 - 2 2 of 4 MMDT2222A

www.diodes.com

Electrical Characteristics

@ T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V

(BR)CBO

75 ¾ V

I

C

= 10mA, I

E

= 0

Collector-Emitter Breakdown Voltage

V

(BR)CEO

40 ¾ V

I

C

= 10mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(BR)EBO

6.0 ¾ V

I

E

= 10mA, I

C

= 0

Collector Cutoff Current

I

CBO

¾ 10

nA

mA

V

CB

= 60V, I

E

= 0

V

CB

= 60V, I

E

= 0, T

A

= 150°C

Collector Cutoff Current

I

CEX

¾ 10 nA

V

CE

= 60V, V

EB(OFF)

= 3.0V

Emitter Cutoff Current

I

EBO

¾ 10 nA

V

EB

= 3.0V, I

C

= 0

Base Cutoff Current

I

BL

¾ 20 nA

V

CE

= 60V, V

EB(OFF)

= 3.0V

ON CHARACTERISTICS (Note 4)

DC Current Gain

h

FE

35

50

75

100

40

50

35

¾

300

¾

I

C

= 100mA, V

CE

= 10V

I

C

= 1.0mA, V

CE

= 10V

I

C

= 10mA, V

CE

= 10V

I

C

= 150mA, V

CE

= 10V

I

C

= 500mA, V

CE

= 10V

I

C

= 10mA, V

CE

= 10V, T

A

= -55°C

I

C

= 150mA, V

CE

= 1.0V

Collector-Emitter Saturation Voltage

V

CE(SAT)

¾

0.3

1.0

V

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

Base-Emitter Saturation Voltage

V

BE(SAT)

0.6

¾

1.2

2.0

V

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

obo

¾ 8pF

V

CB

= 10V, f = 1.0MHz, I

E

= 0

Input Capacitance

C

ibo

—25pF

V

EB

= 0.5V, f = 1.0MHz, I

C

= 0

Current Gain-Bandwidth Product

f

T

300 ¾ MHz

V

CE

= 20V, I

C

= 20mA,

f = 100MHz

Noise Figure

NF ¾ 4.0 dB

V

CE

= 10V, I

C

= 100mA,

R

S

= 1.0kW, f = 1.0kHz

SWITCHING CHARACTERISTICS

Delay Time

t

d

¾ 10 ns

V

CC

= 30V, I

C

= 150mA,

V

BE(off)

= - 0.5V, I

B1

= 15mA

Rise Time

t

r

¾ 25 ns

Storage Time

t

s

¾ 225 ns

V

CC

= 30V, I

C

= 150mA,

I

B1

= I

B2

= 15mA

Fall Time

t

f

¾ 60 ns

Ordering Information

(Note 5)

Device

Packaging Shipping

MMDT2222A-7

SOT-363 3000/Tape & Reel

Notes: 4. Short duration test pulse used to minimize self-heating effect.

5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

6. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BAS40-06T-7-F.

Marking Information

K1P YM

K1P = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: N = 2002

M = Month ex: 9 = September

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004

2005 2006 2007 2008 2009

Code

JKLMNPR

ST U VW

Month Jan Feb March Apr May Jun Jul

Aug Sep Oct Nov Dec

Code

1234567

89 OND

DS30125 Rev. 8 - 2 3 of 4 MMDT2222A

www.diodes.com

0

50

25 50

75

100 125

150

175

200

P , POWER DISSIPATION (mW)

D

T , AMBIENT TEMPERATURE (°C)

A

Fig. 1, Max Power Dissipation vs

Ambient Tem

p

erature

100

150

200

0

1

10

1000

100

0.1

1

10

1000

100

h , DC CURRENT GAIN

FE

I , COLLECTOR CURRENT (mA)

C

Fig. 2 Typical DC Current Gain vs

Collector Current

T = -25°C

A

T = +25°C

A

T = 125°C

A

V=1.0V

CE

1.0

5.0

20

10

30

0.1

101.0

50

CAPACITANCE (pF)

REVERSE VOLTS (V)

Fig. 3 Typical Capacitance

Cobo

Cibo

0.001

0.01

1

10

0.1

100

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2

.

0

I , BASE CURRENT (mA)

B

Fi

g

.4 T

y

pical Collector Saturation Re

g

ion

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

I=1mA

C

I=10mA

C

I=30mA

C

I = 100mA

C

I = 300mA

C

MMDT2222A-7

MMDT2222A-7

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