STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
2/15
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
SD
≤1.0A, di/dt ≤100A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX.
Table 4: Thermal Data
(#) When mounted on FR-4 board of 1 in
2
, 2oz Cu, t < 10 sec
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol Parameter Value Unit
DPAK / IPAK TO-92 SOT-223
V
DS
Drain-source Voltage (V
GS
= 0)
600 V
V
DGR
Drain-gate Voltage (R
GS
= 20 kΩ)
600 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at T
C
= 25°C
1.0 0.4 0.4 A
I
D
Drain Current (continuous) at T
C
= 100°C
0.63 0.25 0.25 A
I
DM
( )
Drain Current (pulsed) 4 1.6 1.6 A
P
TOT
Total Dissipation at T
C
= 25°C
30 3 3.3 W
Derating Factor 0.24 0.025 0.025 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150 °C
DPAK/IPAK TO-92 SOT-223 Unit
Rthj-case Thermal Resistance Junction-case Max 4.16 -- -- °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 120 37.87 (#) °C/W
Rthj-lead Thermal Resistance Junction-lead Max -- 40 -- °C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
275 260 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
1A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
25 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1mA, V
GS
= 0 600 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
1
50
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 30V ±100 nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
2.25 3 3.7 V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 0.5 A 8 8.5 Ω
