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2SK3309(Q)

P1-P3P4-P6
2SK3309
2006-11-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3309
Switching Regulator Applications
• Low drain-source ON resistance: R
DS (ON)
= 0.48 Ω (typ.)
• High forward transfer admittance: |Y
fs
| = 4.3 S (typ.)
• Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 450 V)
• Enhancement-mode: V
th
= 3.0~5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
450 V
Drain-gate voltage (R
GS
= 20 kΩ) V
DGR
450 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
10
Drain current
Pulse (Note 1) I
DP
40
A
Drain power dissipation (Tc = 25°C) P
D
65 W
Single pulse avalanche energy
(Note 2)
E
AS
222 mJ
Avalanche current I
AR
10 A
Repetitive avalanche energy (Note 3) E
AR
6.5 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55~150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
1.92 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
83.3 °C/W
Note 1: Please use devise on condition that the channel temperature is
below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 3.7 mH, R
G
= 25 Ω,
I
AR
= 10 A
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-10S1B
Weight: 1.5 g (typ.)
JEDEC ―
JEITA ―
TOSHIBA 2-10S2B
Weight: 1.5 g (typ.)
2SK3309
2006-11-06
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= ±25 V, V
DS
= 0 V ⎯ ⎯ ±10 μA
Gate -source breakdown voltage V
(BR) GSS
I
G
= ±10 μA, V
DS
= 0 V ±30 ⎯ ⎯ V
Drain cut-off current I
DSS
V
DS
= 450 V, V
GS
= 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
450
550
⎯ ⎯ V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 3.0 ⎯ 5.0 V
Drain-source ON resistance R
DS (ON)
V
GS
= 10 V, I
D
= 5 A ⎯ 0.48 0.65 Ω
Forward transfer admittance ⎪Y
fs
⎪ V
DS
= 10 V, I
D
= 5 A 1.5 4.3 ⎯ S
Input capacitance C
iss
⎯ 920 ⎯
Reverse transfer capacitance C
rss
⎯ 12 ⎯
Output capacitance C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
⎯ 140 ⎯
pF
Rise time t
r
⎯ 25 ⎯
Turn-on time t
on
⎯ 35 ⎯
Fall time t
f
⎯ 10 ⎯
Switching time
Turn-off time t
off
⎯ 60 ⎯
ns
Total gate charge Q
g
⎯ 23 ⎯
Gate-source charge Q
gs
⎯ 9 ⎯
Gate-drain charge Q
gd
V
DD
∼
−
360 V, V
GS
= 10 V, I
D
= 10 A
⎯ 14 ⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1) I
DR
⎯ ⎯ ⎯ 10 A
Pulse drain reverse current (Note 1) I
DRP
⎯ ⎯ ⎯ 40 A
Forward voltage (diode) V
DSF
I
DR
= 10 A, V
GS
= 0 V ⎯ ⎯ −1.7
V
Reverse recovery time t
rr
⎯ 280 ⎯ ns
Reverse recovery charge Q
rr
I
DR
= 10 A, V
GS
= 0 V,
dI
DR
/dt = 100 A/μs
⎯ 2.7 ⎯ μC
Marking
※
Type
K3309
※ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
Duty
<
=
1%, t
w
= 10 μs
0 V
10 V
V
GS
R
L
= 40 Ω
V
DD
∼
−
200 V
I
D
= 5 A
V
OUT
10 Ω
2SK3309
2006-11-06
3
Forward transfer admittance ⎪Y
fs
⎪ (S)
Drain-source voltage V
DS
(V)
Drain-source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(A)
Drain-source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(A)
Gate-source voltage V
GS
(V)
I
D
– V
GS
Drain current I
D
(A)
Gate-source voltage V
GS
(V)
V
DS
– V
GS
Drain current I
D
(A)
⎪Y
fs
⎪ – I
D
Drain current I
D
(A)
R
DS (ON)
– I
D
Drain-source on resistance
R
DS (ON)
(Ω)
8
0
0
2
4
6
10
2 4 8 6 10
V
GS
= 6 V
8
8.5
10 15
Common source
Tc = 25°C
Pulse test
7.5
7
25
100
Tc = −55°C
Common source
V
DS
= 20 V
Pulse test
0.1 1 10 100
100
10
1
0.1
1 10 100
10
1
0.1
Common source
Tc = 25°C
Pulse test
V
GS
= 10, 15 V
0
20
4
8
12
16
0 10 6 2 8 4 12
Common source
V
DS
= 20 V
Pulse test
Tc = −55°C
25
100
20
16
12
8
4
0
0 10 20 30 40 50
V
GS
= 6 V
Common source
Tc = 25°C
Pulse test
7
7.5
15 10
8.5
9
8
0
2
4
8
10
0
I
D
= 10 A
4 8
12
20
2.5
5
Common source
Tc = 25°C
Pulse test
16
6
P1-P3P4-P6

2SK3309(Q)

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