2SA1837,S1CSF(J Datasheet 2SA1837,S1CSF(J, 2SA1837(F,M), 2SA1837,F(J | P1-P3

2SA1837

2006-11-09

1

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA1837

Power Amplifier Applications

Driver Stage Amplifier Applications

• High transition frequency: f

T

= 70 MHz (typ.)

• Complementary to 2SC4793

Absolute Maximum Ratings

(Tc = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage V

CBO

−230 V

Collector-emitter voltage V

CEO

−230 V

Emitter-base voltage V

EBO

−5 V

Collector current I

C

−1 A

Base current I

B

−0.1 A

Ta = 25°C 2.0

Collector power

dissipation

Tc = 25°C

P

C

20

W

Junction temperature T

j

150 °C

Storage temperature range T

stg

−55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-10R1A

Weight: 1.7 g (typ.)

2SA1837

2006-11-09

2

Electrical Characteristics

(Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current I

CBO

V

CB

= −230 V, I

E

= 0 ― ― −1.0 μA

Emitter cut-off current I

EBO

V

EB

= −5 V, I

C

= 0 ― ― −1.0 μA

Collector-emitter breakdown voltage V

(BR) CEO

I

C

= −10 mA, I

B

= 0 −230 ― ― V

DC current gain h

FE

V

CE

= −5 V, I

C

= −100 mA 100 ― 320

Collector-emitter saturation voltage V

CE (sat)

I

C

= −500 mA, I

B

= −50 mA ― ― −1.5 V

Base-emitter voltage V

BE

V

CE

= −5 V, I

C

= −500 mA ― ― −1.0 V

Transition frequency f

T

V

CE

= −10 V, I

C

= −100 mA ― 70 ― MHz

Collector output capacitance C

ob

V

CB

= −10 V, I

C

= 0, f = 1 MHz ― 30 ― pF

Marking

Lot No.

A

line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

A1837

Part No. (or abbreviation code)

2SA1837

2006-11-09

3

Collector-emitter voltage V

CE

(V)

I

C

– V

CE

Collector current I

C

(A)

Base-emitter voltage V

BE

(V)

I

C

– V

BE

Collector current I

C

(A)

Collector current I

C

(A)

h

FE

– I

C

DC current gain h

FE

Collector current I

C

(A)

V

CE (sat)

– I

C

Collector-emitter saturation voltage

V

CE (sat)

(V)

Collector current I

C

(mA)

f

T

– I

C

Transition frequency f

T

(MHz)

Collector-emitter voltage V

CE

(V)

Safe Operating Area

Collector current I

C

(A)

−1.0

0

−0.2

−0.4

−0.6

−0.8

−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4

Common emitter

V

CE

= −5 V

−25 Tc = 100°C 25

1000

10

30

50

100

300

500

−0.003 −0.01 −0.03 −0.1 −0.3 −1 −3

Common emitter

V

CE

= −5 V

−25

Tc = 100°C

25

500

10

−5

−10 −30 −100 −300 −1000

30

50

100

300

Common emitter

V

CE

= −10 V

Tc = 25°C

−5

−0.01

−1

−3 −10 −30 −100 −300

−0.03

−0.05

−0.1

−0.3

−0.5

−1

−3

*: Single nonrepetitive pulse

Tc = 25°C

Curves must be derated linearly

with increase in temperature.

I

C

max (pulsed)*

I

C

max (continuous) 100 ms*

10 ms*

1 ms*

DC operation

−3

−0.01

−0.003

−0.03

−0.05

−0.1

−0.3

−0.5

−1

−0.01 −0.03 −0.1 −0.3 −1 −3

Common emitter

I

C

/I

B

= 10

−25

Tc = 100°C

25

−1.0

0

−0.2

−0.4

−0.6

−0.8

−2 −4 −6 −8 −10

Common emitter

Tc = 25°C

−4

I

B

= −2 mA

−6

−8

−10 −20

2SA1837,S1CSF(J

2SA1837,S1CSF(J

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