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BAW56WT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 8
Publication Order Number:
BAW56WT1/D
1
BAW56WT1G,
SBAW56WT1G
Dual Switching Diode,
Common Anode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Max Unit
Reverse Voltage V
R
70 V
Forward Current I
F
200 mA
Peak Forward Surge Current I
FM(surge)
500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T
A
= 25°C)
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
200
1.6
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
JA
625 °C/W
Total Device Dissipation
Alumina Substrate (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
www.onsemi.com
SC−70
CASE 419
STYLE 4
MARKING DIAGRAM
www.
onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
Device Package Shipping
†
ORDERING INFORMATION
BAW56WT1G SC−70
(Pb−Free)
3,000 / Tape & Ree
l
ANODE
3
CATHODE
1
2
CATHODE
A1 = Device Code
M = Date Code*
G = Pb−Free Package
A1 M G
G
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
SBAW56WT1G SC−70
(Pb−Free)
3,000 / Tape & Ree
l
BAW56WT1G, SBAW56WT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100 A)
V
(BR)
70 −
V
Reverse Voltage Leakage Current
(V
R
= 25 V, T
J
= 150°C)
(V
R
= 70 V)
(V
R
= 70 V, T
J
= 150°C)
I
R
−
−
−
30
2.5
50
A
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
− 2.0
pF
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
V
F
−
−
−
−
715
855
1000
1250
mV
Reverse Recovery Time
(I
F
= I
R
= 10 mA, R
L
= 100 , I
R(REC)
= 1.0 mA) (Figure 1)
t
rr
− 6.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820
0.1 F
DUT
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAW56WT1G, SBAW56WT1G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
100
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
0.1
T
A
= 85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40
50
1.75
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.5
1.25
1.0
0.75
C
D
, DIODE CAPACITANCE (pF)
246 8
I
F
, FORWARD CURRENT (mA)
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Capacitance
T
A
= -40°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
I
R
, REVERSE CURRENT (μA)
P1-P3P4-P4

BAW56WT1G

Mfr. #:
Buy BAW56WT1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 70V 200mA
Lifecycle:
New from this manufacturer.
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