Nexperia
BZT52 series
Single Zener diodes in a SOD123 package
BZT52_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 16 March 2017
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5 Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
F
forward current - 250 mA
I
ZSM
non-repetitive peak reverse current - see Table 8, 9
and 10
P
ZSM
non-repetitive peak power
dissipation
[1]
- 40 W
[2]
- 350 mWP
tot
total power dissipation T
amb
≤ 25 °C
[3]
- 590 mW
T
j
junction temperature - 150
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
[1] t
p
= 100 μs; square wave; T
j
= 25 °C prior to surge.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2.
6 Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1]
- - 350 K/WR
th(j-a)
thermal resistance from junction
to ambient
in free air
[2]
- - 210 K/W
R
th(j-sp)
thermal resistance from junction
to solder point
[3]
- - 55 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB),single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3] Soldering point of cathode tab.
7 Characteristics
Table 7. Characteristics
T
j
= 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 10 mA
[1]
- - 0.9 V
[1] Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
