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BZT52-C6V2J

P1-P3P4-P6P7-P9P10-P12P13-P13
Nexperia
BZT52 series
Single Zener diodes in a SOD123 package
BZT52_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 16 March 2017
4 / 13
Table 8. Characteristics per type; BZT52-C2V4 to BZT52-C24
T
j
= 25 °C unless otherwise specified.
Working
voltage
V
Z
(V);
I
Z
= 5 mA
Maximum
differential
resistance
r
dif
(Ω)
Reverse
current
I
R
(μA)
Temperature
coefficient
S
Z
(mV/K);
I
Z
= 5 mA
Diode
capacitance
C
d
(pF)
[1]
Non-
repetitive
peak reverse
current
I
ZSM
(A)
[2]
BZT52
-xxx
Sel
Min Max I
Z
= 1 mA I
Z
= 5 mA Max V
R
(V) Min Max Max Max
2V4 C 2.2 2.6 400 85 50 1 −3.5 0.0 450 6.0
2V7
C 2.5 2.9 500 83 20 1 −3.5 0.0 450 6.0
3V0
C 2.8 3.2 500 95 10 1 −3.5 0.0 450 6.0
3V3
C 3.1 3.5 500 95 5 1 −3.5 0.0 450 6.0
3V6
C 3.4 3.8 500 95 5 1 −3.5 0.0 450 6.0
3V9
C 3.7 4.1 500 95 3 1 −3.5 0.0 450 6.0
4V3
C 4.0 4.6 500 95 3 1 −3.5 0.0 450 6.0
4V7
C 4.4 5.0 500 78 3 2 −3.5 0.2 300 6.0
5V1
C 4.8 5.4 480 60 2 2 −2.7 1.2 300 6.0
5V6
C 5.2 6.0 400 40 1 2 −2.0 2.5 300 6.0
6V2
C 5.8 6.6 150 10 3 4 0.4 3.7 200 6.0
6V8
C 6.4 7.2 80 8 2 4 1.2 4.5 200 6.0
7V5
C 7.0 7.9 80 10 1 5 2.5 5.3 150 4.0
8V2
C 7.7 8.7 80 10 0.7 5 3.2 6.2 150 4.0
9V1
C 8.5 9.6 100 10 0.5 6 3.8 7 150 3.0
10
C 9.4 10.6 70 10 0.2 7 4.5 8 90 3.0
11
C 10.4 11.6 70 10 0.1 8 5.4 9.0 85 2.5
12
C 11.4 12.7 90 10 0.1 8 6.0 10.0 85 2.5
13
C 12.4 14.1 110 10 0.1 8 7.0 11.0 80 2.5
15
C 13.8 15.6 110 15 0.05 10.5 9.2 13.0 75 2.0
16
C 15.3 17.1 170 20 0.05 11.2 10.4 14.0 75 1.5
18
C 16.8 19.1 170 20 0.05 12.6 12.4 16.0 70 1.5
20
C 18.8 21.2 220 20 0.05 14 14.4 18.0 60 1.5
22
C 20.8 23.3 220 25 0.05 15.4 16.4 20.0 60 1.25
24
C 22.8 25.6 220 30 0.05 16.8 18.4 22.0 55 1.25
[1] f = 1 MHz; V
R
= 0 V.
[2] t
p
= 100 μs; T
amb
= 25 °C.
Nexperia
BZT52 series
Single Zener diodes in a SOD123 package
BZT52_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 16 March 2017
5 / 13
Table 9. Characteristics per type; BZT52-C27 to BZT52-C51
T
j
= 25 °C unless otherwise specified.
Working
voltage
V
Z
(V);
I
Z
= 2 mA
Maximum
differential
resistance
r
dif
(Ω)
Reverse
current
I
R
(μA)
Temperature
coefficient
S
Z
(mV/K);
I
Z
= 5 mA
Diode
capacitance
C
d
(pF)
[1]
Non-
repetitive
peak reverse
current
I
ZSM
(A)
[2]
BZT52
-xxx
Sel
Min Max I
Z
= 1 mA I
Z
= 5 mA Max V
R
(V) Min Max Max Max
27 C 25.1 28.9 250 40 0.05 18.9 21.4 25.3 50 1.0
30 C 28.0 32.0 250 40 0.05 21 24.4 29.4 50 1.0
33 C 31.0 35.0 250 40 0.05 23.1 27.4 33.4 45 0.9
36 C 34.0 38.0 250 60 0.05 25.2 30.4 37.4 45 0.8
39 C 37.0 41.0 300 75 0.05 27.3 33.4 41.2 45 0.7
43 C 40.0 46.0 325 80 0.05 30.1 37.6 46.6 40 0.6
47 C 44.0 50.0 325 90 0.05 32.9 42.0 51.8 40 0.5
51 C 48.0 54.0 350 100 0.05 35.7 46.6 57.2 40 0.4
[1] f = 1 MHz; V
R
= 0 V.
[2] t
p
= 100 μs; T
amb
= 25 °C.
Table 10. Characteristics per type; BZT52-C56 to BZT52-C75
T
j
= 25 °C unless otherwise specified.
Working
voltage
V
Z
(V);
I
Z
= 2 mA
Maximum
differential
resistance
r
dif
(Ω)
Reverse
current
I
R
(μA)
Temperature
coefficient
S
Z
(mV/K);
I
Z
= 5 mA
Diode
capacitance
C
d
(pF)
[1]
Non-
repetitive
peak reverse
current
I
ZSM
(A)
[2]
BZT52
-xxx
Sel
Min Max I
Z
= 0.5
mA
I
Z
= 2 mA Max V
R
(V) Min Max Max Max
56 C 52.0 60.0 375 120 0.05 39.2 52.2 63.8 40 0.3
62 C 58.0 66.0 400 140 0.05 43.4 58.8 71.6 35 0.3
68 C 64.0 72.0 400 160 0.05 47.6 65.6 79.8 35 0.25
75 C 70.0 79.0 400 175 0.05 52.5 73.4 88.6 35 0.20
[1] f = 1 MHz; V
R
= 0 V.
[2] t
p
= 100 μs; T
amb
= 25 °C.
Nexperia
BZT52 series
Single Zener diodes in a SOD123 package
BZT52_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 16 March 2017
6 / 13
mbg801
10
3
1
t
p
(ms)
P
ZSM
(W)
10
10
2
10
- 1
10
1
(1)
(2)
(1) T
j
= 25 °C (prior to surge)
(2) T
j
= 150 °C (prior to surge)
Figure 1. Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum values
V
F
(V)
0.6 10.8
mbg781
100
200
300
I
F
(mA)
0
T
j
= 25 °C
Figure 2. Forward current as a function of forward
voltage; typical values
0 60
0
- 2
- 3
- 1
mbg783
20 40
I
Z
(mA)
S
Z
(mV/K)
4V3
3V9
3V6
3V0
2V4
2V7
3V3
BZT52-C2V4 to BZT52-C4V3
T
j
= 25 °C to 150 °C
Figure 3. Temperature coefficient as a function of
working current; typical values
0 2016
10
0
- 5
5
mbg782
4 8 12
I
Z
(mA)
S
Z
(mV/K)
4V7
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
BZT52-C4V7 to BZT52-C12
T
j
= 25 °C to 150 °C
Figure 4. Temperature coefficient as a function of
working current; typical values
8 Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
P1-P3P4-P6P7-P9P10-P12P13-P13

BZT52-C6V2J

Mfr. #:
Buy BZT52-C6V2J
Manufacturer:
Nexperia
Description:
Zener Diodes BZT52-C6V2/SOD123/SOD2
Lifecycle:
New from this manufacturer.
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