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APTM100SKM90G

P1-P3P4-P6P7-P7
APTM100SKM90G
APTM100SKM90G– Rev 2 October, 2012
www.microsemi.com
1
–
7
Q1
S1
OUT
0/VBUS
CR2
VBUS
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 1000 V
T
c
= 25°C 78
I
D
Continuous Drain Current
T
c
= 80°C 59
I
DM
Pulsed Drain current 312
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 105
m
P
D
Maximum Power Dissipation T
c
= 25°C 1250 W
I
AR
Avalanche current (repetitive and non repetitive) 25 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3000
mJ
V
DSS
= 1000V
R
DSon
= 90m typ @ Tj = 25°C
I
D
= 78A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS 7
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Buck chopper
MOSFET Power Module
APTM100SKM90G
APTM100SKM90G– Rev 2 October, 2012
www.microsemi.com
2
–
7
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
GS
= 0V,V
DS
= 1000V T
j
= 25°C
400
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 800V T
j
= 125°C
2000
µA
R
DS(on)
Drain – Source on Resistance V
GS
= 10V, I
D
= 39A
90 105
m
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 10mA 3 5 V
I
GSS
Gate – Source Leakage Current V
GS
= ±30 V, V
DS
= 0V ±250 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
iss
Input Capacitance 20.7
C
oss
Output Capacitance 3.5
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.64
nF
Q
g
Total gate Charge 744
Q
gs
Gate – Source Charge 96
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 500V
I
D
= 78A
488
nC
T
d(on)
Turn-on Delay Time 18
T
r
Rise Time 12
T
d(off)
Turn-off Delay Time 155
T
f
Fall Time
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 670V
I
D
= 78A
R
G
=1.2
40
ns
E
on
Turn-on Switching Energy 3.6
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 670V
I
D
= 78A,
R
G
= 1.2Ω
2.5
mJ
E
on
Turn-on Switching Energy 5.7
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 670V
I
D
= 78A,
R
G
= 1.2Ω
3.1
mJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1000 V
T
j
= 25°C 250
I
RM
Maximum Reverse Leakage Current V
R
=1000V
T
j
= 125°C 500
µA
I
F
DC Forward Current T
c
= 70°C 100 A
I
F
= 100A 1.9 2.5
I
F
= 200A 2.2
V
F
Diode Forward Voltage
I
F
= 100A T
j
= 125°C
1.7
V
T
j
= 25°C 300
t
rr
Reverse Recovery Time
T
j
= 125°C 360
ns
T
j
= 25°C 800
Q
rr
Reverse Recovery Charge
I
F
= 100A
V
R
= 670V
di/dt = 200A/µs
T
j
= 125°C 4050
nC
APTM100SKM90G
APTM100SKM90G– Rev 2 October, 2012
www.microsemi.com
3
–
7
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor
0.1
R
thJC
Junction to Case Thermal Resistance
Diode
0.55
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque
For terminals M5 2 3.5
N.m
Wt Package Weight 300 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
P1-P3P4-P6P7-P7

APTM100SKM90G

Mfr. #:
Buy APTM100SKM90G
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power Module - Mosfet
Lifecycle:
New from this manufacturer.
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