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VS-HFA140FA60

P1-P3P4-P6
VS-HFA140FA60
www.vishay.com
Vishay Semiconductors
Revision: 31-May-16
1
Document Number: 93992
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 140 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
The dual diode series configuration VS-HFA140FA60 is
used for output rectification or freewheeling/clamping
operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as power supplies, battery chargers electronic welders,
motor control and inverters.
PRODUCT SUMMARY
V
R
600 V
V
F
(typical) 1.33 V
t
rr
(typical) 43 ns
I
F(DC)
at T
C
, per module 140 A at 110 °C
I
F(AV)
at T
C
, per module 140 A at 96 °C
Package SOT-227
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
600 V
Continuous forward current
per leg
I
F
T
C
= 110 °C
70
Aper module 140
Single pulse forward current I
FSM
T
J
= 25 °C 600
Maximum power dissipation, per leg P
D
T
C
= 25 °C 357
W
T
C
= 110 °C 114
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 minute 2500 V
Operating junction and storage
temperature range
T
J
, T
Stg
-55 to +150 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 600 - -
V
Forward voltage, per leg V
FM
I
F
= 60 A - 1.33 1.70
I
F
= 120 A - 1.56 2.04
I
F
= 60 A, T
J
= 125 °C - 1.24 -
I
F
= 60 A, T
J
= 150 °C - 1.19 -
Reverse leakage current, per leg I
RM
V
R
= V
R
rated - 2.5 20 μA
T
J
= 125 °C, V
R
= V
R
rated - 0.8 2
mA
T
J
= 150 °C, V
R
= V
R
rated - 3 9
VS-HFA140FA60
www.vishay.com
Vishay Semiconductors
Revision: 31-May-16
2
Document Number: 93992
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time, per leg t
rr
I
F
= 1 A; dI
F
/dt = 200 A/μs; V
R
= 30 V - 43 -
nsT
J
= 25 °C
I
F
= 50 A
dI
F
/dt = - 200 A/μs
V
R
= 200 V
-90 -
T
J
= 125 °C - 150 -
Peak recovery current, per leg I
RRM
T
J
= 25 °C - 9.5 -
A
T
J
= 125 °C - 17 -
Reverse recovery charge, per leg Q
rr
T
J
= 25 °C - 400 -
nC
T
J
= 125 °C - 1180 -
Junction capacitance, per leg C
T
V
R
= 600 V - 67 - pF
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
R
thJC
- - 0.35
°C/WJunction to case, both legs conducting - - 0.175
Case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight -30 - g
Mounting torque
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf.in)
Case style SOT-227
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.50 1.5 2.51.0 2.0 3.0
1
1000
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
V
R
- Reverse Voltage (V)
10
100
1000
10 000
0.01
0.1
1
1000 200 300 400 500 600
T
J
= 125 °C
T
J
= 150 °C
T
J
= 25 °C
I
R
- Reverse Leakage Current (µA)
10
10
100
100
1000
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
VS-HFA140FA60
www.vishay.com
Vishay Semiconductors
Revision: 31-May-16
3
Document Number: 93992
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
DC
0.01
0.1
1
0.0001 0.001
0.01
0.1 1
10
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
40 80
120 160 200
0
0
50
75
25
100
150
175
125
DC
Square wave (D = 0.50)
80 % rated V
R
applied
See note
(1)
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
80604020
100 120 140
0
250
200
0
100
150
50
DC
RMS limit
D = 0.20
D = 0.75
D = 0.50
D = 0.33
D = 0.25
t
rr
(ns)
dI
F
/dt (A/µs)
100 1000
20
120
160
180
140
100
40
60
80
25 °C
125 °C
V
R
= 200 V
I
F
= 50 A
I
F
= 30 A
Q
rr
(nC)
dI
F
/dt (A/µs)
100 1000
0
1000
1500
2000
500
25 °C
125 °C
V
R
= 200 V
I
F
= 50 A
I
F
= 30 A
P1-P3P4-P6

VS-HFA140FA60

Mfr. #:
Buy VS-HFA140FA60
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600 Volt 140 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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