74AHC1G86GW,165

74AHC_AHCT1G86_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 4 July 2007 4 of 12
NXP Semiconductors
74AHC1G86; 74AHCT1G86
2-input EXCLUSIVE-OR gate
9. Recommended operating conditions
10. Static characteristics
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 74AHC1G86 74AHCT1G86 Unit
Min Typ Max Min Typ Max
V
CC
supply voltage 2.0 5.0 5.5 4.5 5.0 5.5 V
V
I
input voltage 0 - 5.5 0 - 5.5 V
V
O
output voltage 0 - V
CC
0-V
CC
V
T
amb
ambient temperature 40 +25 +125 40 +25 +125 °C
t/V input transition rise
and fall rate
V
CC
= 3.3 V ± 0.3 V - - 100 - - - ns/V
V
CC
= 5.0 V ± 0.5 V - - 20 - - 20 ns/V
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C 40 °C to +85 °C 40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
For type 74AHC1G86
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V 1.5 - - 1.5 - 1.5 - V
V
CC
= 3.0 V 2.1 - - 2.1 - 2.1 - V
V
CC
= 5.5 V 3.85 - - 3.85 - 3.85 - V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V - - 0.5 - 0.5 - 0.5 V
V
CC
= 3.0 V - - 0.9 - 0.9 - 0.9 V
V
CC
= 5.5 V - - 1.65 - 1.65 - 1.65 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 50 µA; V
CC
= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
I
O
= 50 µA; V
CC
= 3.0 V 2.9 3.0 - 2.9 - 2.9 - V
I
O
= 50 µA; V
CC
= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 4.0 mA; V
CC
= 3.0 V 2.58 - - 2.48 - 2.40 - V
I
O
= 8.0 mA; V
CC
= 4.5 V 3.94 - - 3.8 - 3.70 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 50 µA; V
CC
= 2.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 50 µA; V
CC
= 3.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 50 µA; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 3.0 V - - 0.36 - 0.44 - 0.55 V
I
O
= 8.0 mA; V
CC
= 4.5 V - - 0.36 - 0.44 - 0.55 V
I
I
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
- - 0.1 - 1.0 - 2.0 µA
I
CC
supply current V
I
=V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
- - 1.0 - 10 - 40 µA
C
I
input
capacitance
- 1.5 10 - 10 - 10 pF
74AHC_AHCT1G86_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 4 July 2007 5 of 12
NXP Semiconductors
74AHC1G86; 74AHCT1G86
2-input EXCLUSIVE-OR gate
11. Dynamic characteristics
For type 74AHCT1G86
V
IH
HIGH-level
input voltage
V
CC
= 4.5 V to 5.5 V 2.0 - - 2.0 - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V - - 0.8 - 0.8 - 0.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 50 µA 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 8.0 mA 3.94 - - 3.8 - 3.70 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 50 µA - 0 0.1 - 0.1 - 0.1 V
I
O
= 8.0 mA - - 0.36 - 0.44 - 0.55 V
I
I
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
- - 0.1 - 1.0 - 2.0 µA
I
CC
supply current V
I
=V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
- - 1.0 - 10 - 40 µA
I
CC
additional
supply current
per input pin; V
I
= 3.4 V;
other inputs at V
CC
or GND;
I
O
= 0 A; V
CC
= 5.5 V
- - 1.35 - 1.5 - 1.5 mA
C
I
input
capacitance
- 1.5 10 - 10 - 10 pF
Table 7. Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C 40 °C to +85 °C 40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
Table 8. Dynamic characteristics
GND = 0 V; t
r
= t
f
=
3.0 ns. For waveform see Figure 5. For test circuit see Figure 6.
Symbol Parameter Conditions 25 °C 40 °C to +85 °C 40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
For type 74AHC1G86
t
pd
propagation
delay
A and B to Y
[1]
V
CC
= 3.0 V to 3.6 V
[2]
C
L
= 15 pF - 4.0 11.0 1.0 13.0 1.0 14.0 ns
C
L
= 50 pF - 5.8 14.5 1.0 16.5 1.0 18.5 ns
V
CC
= 4.5 V to 5.5 V
[3]
C
L
= 15 pF - 3.4 6.8 1.0 8.0 1.0 8.5 ns
C
L
= 50 pF - 4.9 8.8 1.0 10.0 1.0 11.5 ns
C
PD
power
dissipation
capacitance
per buffer;
C
L
=50pF;f=1 MHz;
V
I
= GND to V
CC
[4]
-9- - - - -pF
74AHC_AHCT1G86_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 4 July 2007 6 of 12
NXP Semiconductors
74AHC1G86; 74AHCT1G86
2-input EXCLUSIVE-OR gate
[1] t
pd
is the same as t
PLH
and t
PHL
.
[2] Typical values are measured at V
CC
= 3.3 V.
[3] Typical values are measured at V
CC
= 5.0 V.
[4] C
PD
is used to determine the dynamic power dissipation P
D
(µW).
P
D
=C
PD
× V
CC
2
× f
i
+ (C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
12. Waveforms
For type 74AHCT1G86
t
pd
propagation
delay
A and B to Y
[1]
V
CC
= 4.5 V to 5.5 V
[3]
C
L
= 15 pF - 3.5 6.9 1.0 8.0 1.0 9.0 ns
C
L
= 50 pF - 5.0 7.9 1.0 9.0 1.0 10.5 ns
C
PD
power
dissipation
capacitance
per buffer;
C
L
=50pF;f=1 MHz;
V
I
= GND to V
CC
[4]
-11- - - - - pF
Table 8. Dynamic characteristics
…continued
GND = 0 V; t
r
= t
f
=
3.0 ns. For waveform see Figure 5. For test circuit see Figure 6.
Symbol Parameter Conditions 25 °C 40 °C to +85 °C 40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
Measurement points are given in Table 9.
Fig 5. The input (A and B) to output (Y) propagation delays
mna041
t
PHL
t
PLH
V
M
V
M
A, B
input
Y
output
Table 9. Measurement points
Type Input Output
V
I
V
M
V
M
74AHC1G86 GND to V
CC
0.5 × V
CC
0.5 × V
CC
74AHCT1G86 GND to 3.0 V 1.5 V 0.5 × V
CC

74AHC1G86GW,165

Mfr. #:
Manufacturer:
Nexperia
Description:
IC GATE XOR 1CH 2-INP 5TSSOP
Lifecycle:
New from this manufacturer.
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