ADA4430-1
Rev. C | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 6 V
Power Dissipation See Figure 3
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +125°C
Lead Temperature (Soldering 10 sec) 300°C
Junction Temperature 150°C
The power dissipated in the package (P
D
) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive. The quiescent power is the
voltage between the supply pins (V
S
) times the quiescent
current (I
S
). The power dissipated due to the load drive depends
upon the particular application. The power due to load drive is
calculated by multiplying the load current by the associated
voltage drop across the device. RMS voltages and currents must
be used in these calculations.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Airflow increases heat dissipation, effectively reducing θ
JA
. In
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes
reduces the θ
JA
.
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 6-lead SC70
(430°C/W) and the 6-lead SOT-23 (170°C/W) on a JEDEC
standard 4-layer board.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, that is, θ
JA
is
specified for a device soldered in the circuit board.
05885-002
1.2
1.0
0.8
0.6
0.4
0.2
0
–40 120100806040020–20
MAXIMUM POWER DISSIPATION (W)
AMBIENT TEMPERATURE (°C)
SOT-23
SC70
Table 4. Thermal Resistance
Package Type θ
JA
Unit
6-Lead SC70 430 °C/W
6-Lead SOT-23 170 °C/W
Maximum Power Dissipation
The maximum safe power dissipation in the ADA4430-1
package is limited by the associated rise in junction temperature
(T
J
) on the die. At approximately 150°C, which is the glass
transition temperature, the plastic changes its properties. Even
temporarily exceeding this temperature limit can change the
stresses that the package exerts on the die, permanently shifting
the parametric performance of the ADA4430-1. Exceeding a
junction temperature of 150°C for an extended period can
result in changes in the silicon devices, potentially causing
failure.
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
