IRF7205PbF
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -30 V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient -0.024 V/°C Reference to 25°C, I
D
= -1mA
0.070 V
GS
= -10V, I
D
= -4.6A
0.130 V
GS
= -4.5V, I
D
= -2.0A
V
GS(th)
Gate Threshold Voltage -1.0 -3.0 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 6.6 S V
DS
= -15V, I
D
= -4.6A
-1.0 V
DS
= -24V, V
GS
= 0V
-5.0 V
DS
= -15V, V
GS
= 0V, T
J
= 70 °C
Gate-to-Source Forward Leakage -100 V
GS
= -20V
Gate-to-Source Reverse Leakage 100 V
GS
= 20V
Q
g
Total Gate Charge 27 40 I
D
= -4.6A
Q
gs
Gate-to-Source Charge 5.2 nC V
DS
= -15V
Q
gd
Gate-to-Drain ("Miller") Charge 7.5 V
GS
= -10V
t
d(on)
Turn-On Delay Time 14 30 V
DD
= -15V
t
r
Rise Time 21 60 I
D
= -1.0A
t
d(off)
Turn-Off Delay Time 97 150 R
G
= 6.0Ω
t
f
Fall Time 71 100 R
D
= 10Ω
Between lead,6mm(0.25in.)
from package and center
of die contact
C
iss
Input Capacitance 870 V
GS
= 0V
C
oss
Output Capacitance 720 pF V
DS
= -10V
C
rss
Reverse Transfer Capacitance 220 = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage -1.2 V T
J
= 25°C, I
S
= -1.25A, V
GS
= 0V
t
rr
Reverse Recovery Time 70 100 ns T
J
= 25°C, I
F
= -4.6A
Q
rr
Reverse RecoveryCharge 100 180 nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
-15
-2.5
A
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance 4.0
L
D
Internal Drain Inductance 2.5
nH
ns
nA
µA
Ω
R
DS(ON)
Static Drain-to-Source On-Resistance
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
≤ -4.6A, di/dt ≤ 90A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
S
D
G
S
D
G
