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IPC100N04S5L2R6ATMA1
P1-P3
P4-P6
P7-P9
IPC1
00N0
4S5L-2R
6
1 Power dissipation
2 Drain current
P
tot
= f(
T
C
);
V
GS
= 10 V
I
D
= f(
T
C
);
V
GS
= 10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
= f(
V
DS
);
T
C
= 25 °C;
D
= 0
Z
thJC
= f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
single
pul
se
0.01
0.05
0.1
0.5
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Z
thJC
[K/W]
t
p
[s]
0.1
1 µs
10 µs
100 µs
150 µs
1
10
100
1000
0.1
1
10
100
I
D
[A]
V
DS
[V]
0
10
20
30
40
50
60
70
80
0
50
100
150
200
P
tot
[W]
T
C
[
°
C]
0
10
20
30
40
50
60
70
80
90
100
110
0
50
100
150
200
I
D
[A]
T
C
[
°
C]
Rev. 1.0
page 4
2016-12-06
IPC1
00N0
4S5L-2R
6
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I
D
= f(
V
DS
);
T
j
= 25 °C
R
DS(on)
= f(
I
D
);
T
j
= 25 °C
parameter:
V
GS
parameter:
V
GS
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I
D
= f(
V
GS
);
V
DS
= 6V
R
DS(on)
= f(
T
j
);
I
D
= 50 A;
V
GS
= 10 V
parameter:
T
j
1
2
3
4
5
-60
-20
20
60
100
140
180
R
DS(on)
[m
W
]
T
j
[
°
C]
2.75 V
3 V
3.5 V
10 V
0
40
80
120
160
200
240
280
320
360
400
0
1
2
3
I
D
[A]
V
DS
[V]
2.5 V
2.5 V
2.75 V
3 V
0
2
4
6
8
10
12
14
0
50
100
150
200
250
300
350
400
R
DS(on)
[m
W
]
I
D
[A]
3.5 V
10 V
-
55
°C
25
°C
175
°C
0
40
80
120
160
200
240
280
320
360
400
1.5
2
2.5
3
3.5
4
I
D
[A]
V
GS
[V]
Rev. 1.0
page 5
2016-12-06
IPC1
00N0
4S5L-2R
6
9 Typ. gate threshold voltage
10 Typ. capacitances
V
GS(th)
= f(
T
j
);
V
GS
=
V
DS
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
parameter:
I
D
11 Typical forward diode characteristics
12 A
valanche characteristics
IF = f(V
SD
)
I
A S
= f(
t
AV
)
parameter:
T
j
parameter: T
j(start)
25
°C
175
°C
10
0
10
1
10
2
10
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
I
F
[A]
V
SD
[V]
30 µA
300 µA
0
0.5
1
1.5
2
-60
-20
20
60
100
140
180
V
GS(th)
[V]
T
j
[
°
C]
Ciss
Coss
Crss
10
2
10
3
10
4
0
10
20
30
C
[pF]
V
DS
[V]
10
1
25
°C
100
°C
150
°C
1
10
100
1000
1
10
100
1000
I
AV
[A]
t
AV
[µs]
25
°C
175
°C
10
0
10
1
10
2
10
3
0
0.4
0.8
1.2
I
F
[A]
V
SD
[V]
Rev. 1.0
page 6
2016-12-06
P1-P3
P4-P6
P7-P9
IPC100N04S5L2R6ATMA1
Mfr. #:
Buy IPC100N04S5L2R6ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFET_(20V,40V)
Lifecycle:
New from this manufacturer.
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