IRLML6244TRPBF Datasheet IRLML6244TRPBF | P1-P3

03/09/12

IRLML6244TRPbF

HEXFET

®

Power MOSFET

www.irf.com 1

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes  through

 are on page 10

Application(s)

Micro3

TM

(SOT-23)

IRLML6244TRPbF

Features and Benefits

Absolute Maximum Ratings

Symbol

Parameter

Units

V

DS

Drain-Source Voltage

V

I

D

@ T

A

= 25°C Continuous Drain Current, V

GS

@ 10V

I

D

@ T

A

= 70°C Continuous Drain Current, V

GS

@ 10V

I

DM

Pulsed Drain Current

P

D

@T

A

= 25°C

Maximum Power Dissipation

P

D

@T

A

= 70°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V

GS

Gate-to-Source Voltage

V

T

J,

T

STG

Junction and Storage Temperature Range °C

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R

JA

Junction-to-Ambient

––– 100

R

JA

Junction-to-Ambient (t<10s)

––– 99

°C/W

A

Max.

6.3

5.1

-55 to + 150

± 12

0.01

20

1.3

0.80

32

W

Load/ System Switch

Features

Benefits

Low R

DS(on)

( < 21m



)

Lower conduction losses

Industry-standard SOT-23 Package results in Multi-vendor compatibility

RoHS compliant containing no lead, no bromide and no halogen



Environmentally friendly

V

DS

20 V

V

GS Max

±12 V

R

DS(on) max

(@V

GS

= 4.5V)

21.0

m



R

DS(on) max

(@V

GS

= 2.5V)

27.0

m



PD - 97535A

IRLML6244TRPbF

2 www.irf.com

D

S

G

Electric Characteristics @ T

J

= 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage 20 ––– ––– V



V

(BR)DSS

/



T

J

Breakdown Voltage Temp. Coefficient ––– 7.8 ––– mV/°C

––– 16.0 21.0

––– 22.0 27.0

V

GS(th)

Gate Threshold Voltage 0.5 0.9 1.1 V

I

DSS

––– ––– 1.0

––– ––– 150

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

R

G

Internal Gate Resistance ––– 1.7 –––



gfs Forward Transconductance 17 ––– ––– S

Q

g

Total Gate Charge ––– 8.9 –––

Q

gs

Gate-to-Source Charge ––– 0.68 –––

Q

gd

Gate-to-Drain ("Miller") Charge ––– 4.4 –––

t

d(on)

Turn-On Delay Time ––– 4.9 –––

t

r

Rise Time ––– 7.5 –––

t

d(off)

Turn-Off Delay Time ––– 19 –––

t

f

Fall Time –––12–––

C

iss

Input Capacitance ––– 700 –––

C

oss

Output Capacitance ––– 140 –––

C

rss

Reverse Transfer Capacitance ––– 98 –––

Source - Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

I

S

Continuous Source Current

(Body Diode)

I

SM

Pulsed Source Current

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.2 V

t

rr

Reverse Recovery Time ––– 12 18 ns

Q

rr

Reverse Recovery Charge ––– 5.1 7.7 nC

––– –––

pF

A

1.3

32

V

DD

=10V

nA

nC

ns

V

DS

= V

GS

, I

D

= 10μA

V

DS

= 16V, V

GS

= 0V

V

DS

= 16V, V

GS

= 0V, T

J

= 125°C

R

DS(on)

V

GS

= 2.5V, I

D

=

5.1A

Static Drain-to-Source On-Resistance

Drain-to-Source Leakage Current μA

m



Conditions

V

GS

= 0V, I

D

= 250μA

Reference to 25°C, I

D

= 1mA

V

GS

= 4.5V, I

D

=

6.3A

MOSFET symbol

showing the

V

DS

=10V

Conditions

V

GS

= 4.5V

V

GS

= 0V

V

DS

= 16V

ƒ = 1.0MHz

R

G

= 6.8

V

GS

= 4.5V

di/dt = 100A/μs

V

GS

= 12V

V

GS

= -12V

T

J

= 25°C, I

S

= 6.3A, V

GS

= 0V

integral reverse

p-n junction diode.

V

DS

= 10V, I

D

= 6.3A

I

D

= 6.3A

I

D

= 1.0A

T

J

= 25°C, V

R

= 15V, I

F

=1.3A

IRLML6244TRPbF

www.irf.com 3

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

0.5 1.0 1.5 2.0 2.5 3.0

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 150°C

V

DS

= 15V



60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 6.3A

V

GS

= 4.5V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

1.5V



60μs PULSE WIDTH

Tj = 150°C

VGS

TOP 10V

4.5V

3.0V

2.5V

2.3V

2.0V

1.8V

BOTTOM 1.5V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 10V

4.5V

3.0V

2.5V

2.3V

2.0V

1.8V

BOTTOM 1.5V



60μs PULSE WIDTH

Tj = 25°C

1.5V

IRLML6244TRPBF

IRLML6244TRPBF

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