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MBRM130LT1G

P1-P3P4-P5
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 5
1 Publication Order Number:
MBRM130L/D
MBRM130LT1G,
NRVBM130LT1G,
MBRM130LT3G,
NRVBM130LT3G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The SchottkyPOWERMITE
employs the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
thePOWERMITE
has the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles, 1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “ORing” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Low Profile − Maximum Height of 1.1 mm
Small Footprint − Footprint Area of 8.45 mm
2
Low V
F
Provides Higher Efficiency and Extends Battery Life
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings:
Human Body Model = 3B (> 16 kV)
Machine Model = C (> 400 V)
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:
POWERMITE
is JEDEC Registered as D0−216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 30 VOLTS
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device Package Shipping
†
ORDERING INFORMATION
MBRM130LT1G POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
MBRM130LT3G POWERMITE
(Pb−Free)
12,000 /
Tape & Reel
POWERMITE
CASE 457
PLASTIC
CATHODE
ANODE
MARKING DIAGRAM
M = Date Code
BCG = Device Code
G = Pb−Free Package
NRVBM130LT1G POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
NRVBM130LT3G POWERMITE
(Pb−Free)
12,000 /
Tape & Reel
M
BCGG
12
MBRM130LT1G, NRVBM130LT1G, MBRM130LT3G, NRVBM130LT3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30 V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 135C)
I
O
1.0
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 100 kHz, T
C
= 135C)
I
FRM
2.0
A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
I
FSM
50
A
Storage Temperature T
stg
−55 to 150 C
Operating Junction Temperature T
J
−55 to 125 C
Voltage Rate of Change
(Rated V
R
, T
J
= 25C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
R
tjl
R
tjtab
R
tja
35
23
277
C/W
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
V
F
T
J
= 25C T
J
= 85C
V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 3.0 A)
0.30
0.38
0.52
0.20
0.33
0.50
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
I
R
T
J
= 25C T
J
= 85C
mA
(V
R
= 30 V)
(V
R
= 20 V)
(V
R
= 10 V)
0.41
0.13
0.05
11
5.3
3.2
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
0.1
0.30.1 0.2 0.4
T
J
= 85C
T
J
= 150C
T
J
= −40C
T
J
= 25C
10
1.0
0.1
0.6
T
J
= 125C
0.5
0 0.30.1 0.2 0.4
T
J
= 85C
T
J
= 150C
T
J
= −40C
T
J
= 25C
0.6
T
J
= 125C
0.5
MBRM130LT1G, NRVBM130LT1G, MBRM130LT3G, NRVBM130LT3G
http://onsemi.com
3
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
I
R
, REVERSE CURRENT (AMPS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
200
V
R
, REVERSE VOLTAGE (VOLTS)
10E−3
1.0E−3
100E−6
10E−6
1.0E−6
V
R
, REVERSE VOLTAGE (VOLTS)
5.0 10 15 300
100E−6
10E−6
5.0 10 15
T
J
= 85C
T
J
= 25C
100E−3
10E−3
1.0E−3
3025
20
25
T
J
= 85C
T
J
= 25C
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
I
O
, AVERAGE FORWARD CURRENT (AMPS)
I
pk
/I
o
= 5
Figure 5. Current Derating Figure 6. Forward Power Dissipation
45 7525
T
L
, LEAD TEMPERATURE (C)
1.8
1.2
1.0
0.8
0.2
0
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.20
0.7
0.6
0.5
0.3
0.1
0
1.055 115105
1.4
0.4 0.8 1.2 1.6
0.4
125
1.6
SQUARE
WAVE
dc
I
pk
/I
o
= p
I
pk
/I
o
= 10
I
pk
/I
o
= 20
I
pk
/I
o
= 20
I
pk
/I
o
= 10
I
pk
/I
o
= 5
I
pk
/I
o
= p
SQUARE WAVE
dc
0.6
0.4
FREQ = 20 kHz
0.6 1.4
0.2
35 65 85 95
T
J
, DERATED OPERATING TEMPERATURE (_C)
C, CAPACITANCE (pF)
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating
*
0
V
R
, REVERSE VOLTAGE (VOLTS)
1000
100
10
V
R
, DC REVERSE VOLTAGE (VOLTS)
15 300
60
40
20
105.0 15 205.0 10
50
140
150
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
may be calculated from the equation: T
J
= T
Jmax
− r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
− r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
R
tja
= 10C/W
15C/W
25C/W
35C/W
T
J
= 25C
3020 25
80
25
20C/W
30
120
100
110
130
90
70
P1-P3P4-P5

MBRM130LT1G

Mfr. #:
Buy MBRM130LT1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1A 30V Low Vf
Lifecycle:
New from this manufacturer.
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