Electrical ratings STD30PF03LT4 - STD30PF03L-1
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1 Electrical ratings
Table 2. Absolute maximum ratings
Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
=0)
30 V
V
GS
Gate-source voltage ± 16 V
I
D
(1)
1. Current limited by wire bonding
Drain current (continuous) at T
C
= 25 °C
24 A
I
D
(1)
Drain current (continuous) at T
C
= 100 °C
24 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 96 A
P
TOT
Total dissipation at T
C
=25 °C
70 W
Derating factor 0.47 W/°C
E
AS
(3)
3. Starting T
J
= 25 °C, I
D
= 12 A, V
DD
=15 V
Single pulse avalanche energy 850 mJ
T
stg
Storage temperature -55 to 175 °C
T
j
Max. operating junction temperature 175 °C
Table 3. Thermal data
Symbol Parameter
Max value
Unit
DPAK IPAK
R
thj-case
Thermal resistance junction-case max 2.14 °C/W
R
thj-amb
Thermal resistance junction-ambient max -- 100 °C/W
R
thj-pcb
Thermal resistance junction-pcb max
50
(1)
1. When mounted on FR- 4board of 1 inch².
-- °C/W
T
l
Maximum lead temperature for soldering purpose -- 275 °C/W
