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HMC292ALC3B

P1-P3P4-P6P7-P9P10-P12P13-P15
HMC292ALC3B Data Sheet
Rev. A | Page 4 of 15
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
RF Input Power 18 dBm
LO Input Power
27 dBm
IF Input Power 18 dBm
IF Source and Sink Current ±3 mA
Reflow Temperature 260°C
Maximum Junction Temperature 175°C
Continuous Power Dissipation, P
DISS
(T
A
= 85°C, Derate 5.12 mW/°C
Above 85°C)
460 mW
Operating Temperature Range −40 to +85°C
Storage Temperature Range −65 to +150°C
Lead Temperature Range −65 to +150°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM) 500 V
Field Induced Charged Device
Model (FICDM)
500 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θ
JA
is the natural convection junction to ambient thermal resistance
measured in a one cubic foot sealed enclosure. θ
JC
is the junction to
case thermal resistance.
Table 3. Thermal Resistance
Package Type θ
JA
θ
JC
Unit
E-12-4
1
120 195 °C/W
1
See JEDEC standard JESD51-2 for additional information on optimizing the
thermal impedance (PCB with 3 × 3 vias).
ESD CAUTION
Data Sheet HMC292ALC3B
Rev. A | Page 5 of 15
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
GND
7
GND
8
RF
9
GND
10
NIC
11
NIC
12
NIC
4
GND
2
LO
3
GND
5
IF
6
GND
PACKAGE
BASE
GND
NOTES
1. NOT INTERNALLY CONNECTED. THESE PINS
CAN BE CONNECTED TO RF/DC GROUND.
PERFORMANCE IS NOT AFFECTED.
2. EXPOSED PAD. THE EXPOSED PAD MUST BE
CONNECTED TO RF/DC GROUND.
HMC292ALC3B
TOP VIEW
(Not to Scale)
13886-002
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1, 3, 4, 6, 7, 9 GND Ground. These pins and package bottom must be connect to RF/dc ground. See Figure 3 for the interface
schematic.
2 LO Local Oscillator Port. This pin is ac-coupled and matched to 50 Ω. See Figure 4 for the interface schematic.
5 IF Intermediate Frequency Port. This pin is dc-coupled. For applications, not requiring operation to dc, dc block
this port externally using a series capacitor of a value chosen to pass the necessary IF frequency range. For
operation to dc, this pin must not source or sink more than 3 mA of current or die malfunction and possible
die failure can result. See Figure 5 for the interface schematic.
8 RF Radio Frequency Port. This pin is ac-coupled and matched to 50 Ω. See Figure 6 for the interface schematic.
10, 11, 12 NIC Not Internally Connected. These pins can be connected to RF/dc ground. Performance is not affected.
EPAD Exposed Pad. The exposed pad must be connected to RF/dc ground.
INTERFACE SCHEMATICS
Figure 3. GND Interface Schematic
LO
13886-004
Figure 4. LO Interface Schematic
IF
13886-005
Figure 5. IF Interface Schematic
RF
13886-006
Figure 6. RF Interface Schematic
HMC292ALC3B Data Sheet
Rev. A | Page 6 of 15
TYPICAL PERFORMANCE CHARACTERISTICS
DOWNCONVERTER PERFORMANCE
Downconverter performance at IF = 1 GHz, upper sideband (low-side LO).
0
–5
–10
–15
–20
14 16 18 20 22 24 26 28 30
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
13886-007
Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures,
LO = 13 dBm
40
35
30
20
25
10
15
5
0
14 16 18 20 22 24 26 28 30
INPUT IP3 (dBm)
RF FREQUENCY (GHz)
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
13886-008
Figure 8. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 13 dBm
25
20
15
10
5
0
14 16 18 20 22 24 26 28 30
NOISE FIGURE (dB)
RF FREQUENCY (GHz)
13886-009
Figure 9. Noise Figure vs. RF Frequency at T
A
= 25°C, LO = 13 dBm
0
–5
–10
–15
–20
14 16 18 20 22 24 26 28 30
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
LO = 15dBm
LO = 13dBm
LO = 11dBm
LO = 9dBm
13886-010
Figure 10. Conversion Gain vs. RF Frequency at Various LO Power Levels,
T
A
= 25°C
40
35
30
20
25
10
15
5
0
14
16 18 20
22 24 26
28 30
INPUT IP3 (dBm)
RF FREQUENCY (GHz)
LO = 15dBm
LO = 13dBm
LO = 11dBm
LO = 9dBm
13886-0
11
Figure 11. Input IP3 vs. RF Frequency at Various LO Power Levels,
T
A
= 25°C
P1-P3P4-P6P7-P9P10-P12P13-P15

HMC292ALC3B

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RF Mixer Mixers
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