AUIRG4BC30S-S

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

AUIRG4BC30S-S/SL

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Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

RMS

of fundamental)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

1

10

100

1 10

V , Collector-to-Emitter Voltage (V)

I , Collector-to-Emitter Current (A)

CE

C

V = 15V

20µs PULSE WIDTH

GE

T = 25 C

J

o

T = 150 C

J

o

0.1

1

10

100

5 6 7 8 9 10

V , Gate-to-Emitter Voltage (V)

I , Collector-to-Emitter Current (A)

GE

C

V = 50V

5µs PULSE WIDTH

CC

T = 25 C

J

o

T = 150 C

J

o

Load Current ( A )

0

10

20

30

40

50

0.1 1 10 100

f, Frequency (kHz)

A

60% of rated

voltage

I

Ideal diodes

Square wave:

For both:

Duty cycle: 50%

T = 125°C

T = 90°C

Gate drive as specified

sink

J

Triangular wave:

I

Clamp voltage:

80% of rated

Power Dissipation = W

21

AUIRG4BC30S-S/SL

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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs. Case

Temperature

-60 -40 -20 0 20 40 60 80 100 120 140 160

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

V , Collector-to-Emitter Voltage(V)

J

°

CE

V = 15V

80 us PULSE WIDTH

GE

I = A9

C

I = A18

C

I = A36

C

25 50 75 100 125 150

0

5

10

15

20

25

30

35

T , Case Temperature ( C)

Maximum DC Collector Current(A)

C

°

9.0 A

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

AUIRG4BC30S-S/SL

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Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.1

1

10

100

T , Junction Temperature ( C )

Total Switching Losses (mJ)

J

°

R = 23Ohm

V = 15V

V = 480V

G

GE

CC

I = A

36

C

I = A

18

C

I = A

9

C

Ω

1 10 100

0

500

1000

1500

2000

V , Collector-to-Emitter Voltage (V)

C, Capacitance (pF)

CE

V

C

C

C

=

=

=

=

0V,

C

C

C

f = 1MHz

+ C

+ C

C SHORTED

GE

ies ge gc , ce

res gc

oes ce gc

C

ies

C

oes

C

res

9.0 A

0 10 20 30 40 50 60

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Emitter Voltage (V)

G

GE

V = 400V

I = 18A

CC

C

0 10 20 30 40 50

3.60

3.64

3.68

3.72

3.76

3.80

R , Gate Resistance (Ohm)

Total Switching Losses (mJ)

G

V = 480V

V = 15V

T = 25 C

I = 18A

CC

GE

J

C

°

Ω

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

AUIRG4BC30S-S

Mfr. #:

Buy AUIRG4BC30S-S

Manufacturer:

Infineon Technologies

Description:

IGBT Transistors 600V AUTO DC-1 KHZ DISCRETE IGBT

Lifecycle:

New from this manufacturer.

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