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BD546A-S

P1-P3P4-P4
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●
Designed for Complementary Use with the
BD545 Series
●
85 W at 25°C Case Temperature
●
15 A Continuous Collector Current
●
Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
E
= 0)
BD546
BD546A
BD546B
BD546C
V
CBO
-40
-60
-80
-100
V
Collector-emitter voltage (I
B
= 0) (see Note 1)
BD546
BD546A
BD546B
BD546C
V
CEO
-40
-60
-80
-100
V
Emitter-base voltage V
EBO
-5 V
Continuous collector current I
C
-15 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
tot
85 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
tot
3.5 W
Operating free air temperature range T
A
-65 to +150 °C
Operating junction temperature range T
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds T
L
260 °C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3
OBSOLETE
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
(see Note 4)
I
B
= 0
BD546
BD546A
BD546B
BD546C
-40
-60
-80
-100
V
I
CES
Collector-emitter
cut-off current
V
CE
= -40 V
V
CE
= -60 V
V
CE
= -80 V
V
CE
= -100 V
V
BE
=0
V
BE
=0
V
BE
=0
V
BE
=0
BD546
BD546A
BD546B
BD546C
-0.4
-0.4
-0.4
-0.4
mA
I
CEO
Collector cut-off
current
V
CE
= -30 V
V
CE
= -60 V
I
B
=0
I
B
=0
BD546/546A
BD546B/546C
-0.7
-0.7
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V I
C
=0 -1 mA
h
FE
Forward current
transfer ratio
V
CE
= -4 V
V
CE
= -4 V
V
CE
= -4 V
I
C
= -1 A
I
C
= -5 A
I
C
= -10A
(see Notes 4 and 5)
60
25
10
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -625 mA
I
B
= -2 A
I
C
= -5 A
I
C
= -10A
(see Notes 4 and 5)
-0.8
-1
V
V
BE
Base-emitter
voltage
V
CE
= -4 V I
C
= -10 A (see Notes 4 and 5) -1.8 V
h
fe
Small signal forward
current transfer ratio
V
CE
= -10 V I
C
=-0.5A f = 1 kHz 20
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= -10 V I
C
=-0.5A f = 1 MHz 3
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 1.47 °C/W
R
θJA
Junction to free air thermal resistance 35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
†
MIN TYP MAX UNIT
t
on
Tu r n -o n t i m e I
C
= -6 A
V
BE(off)
= 4 V
I
B(on)
= -0.6 A
R
L
= 5 Ω
I
B(off)
= 0.6 A
t
p
= 20 µs, dc ≤ 2%
0.4 µs
t
off
Turn-off time 0.7 µs
OBSOLETE
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
3
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0·1 -1·0 -10
h
FE
- DC Current Gain
1
10
100
1000
TCS634AJ
V
CE
= -4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
-0·01 -0·1 -1·0 -10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-0·01
-0·1
-1·0
-10
TCS634AB
I
C
= -1 A
I
C
= -3 A
I
C
= -6 A
I
C
= -10 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0·1 -1·0 -10
V
BE
- Base-Emitter Voltage - V
-0·6
-0·8
-1·0
-1·2
-1·4
-1·6
TCS634AC
V
CE
= -4 V
T
C
= 25 °C
OBSOLETE
P1-P3P4-P4

BD546A-S

Mfr. #:
Buy BD546A-S
Manufacturer:
Bourns
Description:
Bipolar Transistors - BJT 80V 15A PNP
Lifecycle:
New from this manufacturer.
Delivery:
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