© Semiconductor Components Industries, LLC, 2010

September, 2010 − Rev. 0

1 Publication Order Number:

EMI7204MU/D

EMI7204MU, EMI7206MU,

EMI7208MU

Four-Six-Eight -Channel

EMI Filter with Integrated

ESD Protection

The EMI720xMU Series is a family of LC EMI filters with

integrated ESD protection. Its typical component values of L = 17 nH

and C = 12 pF deliver a cutoff frequency of 250 MHz and stop band

attenuation greater than −23 dB from 800 MHz to 6.0 GHz.

This performance makes the part ideal for parallel interfaces with

data rates up to 125 Mbps in applications where wireless interference

must be minimized. The specified attenuation range is very effective

in minimizing interference from 2G/3G, GPS, Bluetooth® and

WLAN signals.

The EMI720xMU Series is available in the low−profile 4, 6, and 8

lead, 0.5 mm thick UDFN surface mount packages with 0.4 mm lead

pitch.

Features/Benefits

• $16 kV ESD Protection on Each Channel (IEC61000−4−2 Level 4,

Contact Discharge)

• L/C Values of 17 nH and 12 pF Deliver Exceptional S21

Performance Characteristics of 250 MHz f

3dB

and −23 dB Stop Band

Attenuation from 800 MHz to 6.0 GHz

• Integrated EMI/ESD System Solution in UDFN Package Offers

Exceptional Cost, System Reliability and Space Savings

• These are Pb−Free Devices

Applications

• Wireless Handsets

• EMI Filtering for LCD and Camera Data Lines

• EMI Filtering and Protection for I/O Ports and Keypads

Figure 1. Electrical Schematic Figure 2. Typical Insertion Loss Curve

See Table 1 for pin description

C

d

= 12 pF

C

d

= 12 pF

Filter + ESD

n

Filter + ESD

n

L = 17 nH

FREQUENCY (Hz)

S21 (dB)

UDFN8

CASE 517BC

MARKING

DIAGRAMS

http://onsemi.com

UDFN12

CASE 517BD

UDFN16

CASE 517BE

1

8

74 MG

G

1

XX = Specific Device Code

M = Date Code

G = Pb−Free Package

(Note: Microdot may be in either location)

1

12

1

76 MG

G

1

16

1

78 MG

G

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

EMI7204MU, EMI7206MU, EMI7208MU

http://onsemi.com

2

Figure 3. Pin Diagram

(Bottom View)

1234

8567

EMI7204MU

GND

123456

789101112

GND

EMI7208MU

12345678

910111213141516

GND

EMI7206MU

Table 1. FUNCTIONAL PIN DESCRIPTION

Filter Device Pins Description

EMI7204MU EMI7206MU EMI7208MU

Filter 1 1 & 8 1 & 12 1 & 16 Filter + ESD Channel 1

Filter 2 2 & 7 2 & 11 2 & 15 Filter + ESD Channel 2

Filter 3 3 & 6 3 & 10 3 & 14 Filter + ESD Channel 3

Filter 4 4 & 5 4 & 9 4 & 13 Filter + ESD Channel 4

Filter 5 5 & 8 5 & 12 Filter + ESD Channel 5

Filter 6 6 & 7 6 & 11 Filter + ESD Channel 6

Filter 7 7 & 10 Filter + ESD Channel 7

Filter 8 8 & 9 Filter + ESD Channel 8

Ground Pad GND GND GND Ground

MAXIMUM RATINGS (T

J

= 25°C unless otherwise noted)

Parameter

Symbol Value Unit

ESD IEC61000−4−2 (Contact Discharge) V

PP

$16 kV

ESD Human Body Model MIL−STD−−883 V

PP

$16 kV

Operating Temperature Range T

OP

−40 to 85 °C

Storage Temperature T

STG

−65 to 150 °C

Maximum Lead Temperature for Soldering Purpose (1.8 in from case for 10 seconds) T

L

260 °C

Current per inductor I

C

30 mA

DC package power rating P

p

500 mW

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

ELECTRICAL CHARACTERISTICS (T

J

= 25° unless otherwise noted).

Parameter

Symbol Test Conditions Min Typ Max Unit

Maximum reverse Working Voltage V

RWM

5.0 V

Breakdown Voltage Positive Clamp V

BR

I

R

= 1.0 mA 5.6 6.8 9.0 V

Breakdown Voltage Negative Clamp V

BR

I

R

= 1.0 mA −1.5 −0.08 −0.04 V

Leak Current I

R

V

RWM

= 3.3 V 0.1 1.0

mA

Resistance R

A

10

W

Inductance L 17 nH

Diode Capacitance C

1

V

R

= 2.5 V, f = 1.0 MHz,

30 mVAC

12 pF

Line Capacitance C

t

18.8 24.2 28.2 pF

3dB Cut−Off Frequency (Note 1) f

3dB

Above this frequency,

appreciable attenuation

occurs

250 MHz

Stop Band Attenuation 800 MHz to 6.0 GHz 23 dB

1. 50 W source and 50 W load termination.

EMI7204MU, EMI7206MU, EMI7208MU

http://onsemi.com

3

Theory of Operation

The EMI720X combines ESD protection and EMI

filtering conveniently into a small package for today’s size

constrained applications. The capacitance inherent to a

typical protection diode is utilized to provide the

capacitance value necessary to create the desired frequency

response based upon the series resistance in the filter. By

combining this functionality into one device, a large number

of discrete components are integrated into one small

package saving valuable board space and reducing BOM

count and cost in the application.

Application Example

The accepted practice for specifying bandwidth in a filter

is to use the 3 dB cutoff frequency. Utilizing points such as

the 6 dB or 9 dB cutoff frequencies results in signal

degradation in an application. This can be illustrated in an

application example. A typical application would include

EMI filtering of data lines in a camera or display interface.

In such an example it is important to first understand the

signal and its spectral content. By understanding these

things, an appropriate filter can be selected for the desired

application. A typical data signal is pattern of 1’s and 0’s

transmitted over a line in a form similar to a square wave.

The maximum frequency of such a signal would be the

pattern 1−0−1−0 such that for a signal with a data rate of

100 Mbps, the maximum frequency component would be

50 MHz. The next item to consider is the spectral content of

the signal, which can be understood with the Fourier series

approximation of a square wave, shown below in

Equations 1 and 2 in the Fourier series approximation.

From this it can be seen that a square wave consists of odd

order harmonics and to fully construct a square wave n must

go to infinity. However, to retain an acceptable portion of the

waveform, the first two terms are generally sufficient. These

two terms contain about 85% of the signal amplitude and

allow a reasonable square wave to be reconstructed.

Therefore, to reasonably pass a square wave of frequency x

the minimum filter bandwidth necessary is 3x. All

ON Semiconductor EMI filters are rated according to this

principle. Attempting to violate this principle will result in

significant rounding of the waveform and cause problems in

transmitting the correct data. For example, take the filter

with the response shown in Figure 4 and apply three

different data waveforms. To calculate these three different

frequencies, the 3 dB, 6 dB, and 9 dB bandwidths will be

used.

Equation 1:

x(t) +

1

2

)

2

p

a

S

n + 1

ƪ

1

2n * 1

sin

ǒ

(

2n * 1

)

w

0

t

Ǔ

ƫ

(eq. 1)

Equation 2 (Simplified form of Equation 1):

x(t) +

1

2

)

(eq. 2)

2

p

ƪ

sin

ǒ

w

0

t

Ǔ

1

) p20

sin

ǒ

3w

0

t

Ǔ

3

) p20

sin

ǒ

5w

0

t

Ǔ

5

)AAA

ƫ

MAGNITUDE

(dB)

FREQUENCY

(Hz)

100k 1M 100M 1G 10G10M

−3 dB

−6 dB

−9 dB

Figure 4. Filter Bandwidth

f

1

f

2

f

3

From the above paragraphs it is shown that the maximum

supported frequency of a waveform that can be passed

through the filter can be found by dividing the bandwidth by

a factor of three (to obtain the corresponding data rate

multiply the result by two). The following table gives the

bandwidth values and the corresponding maximum

supported frequencies and the third harmonic frequencies.

Mfr. #:

Manufacturer:

ON Semiconductor

Description:

TVS Diodes / ESD Suppressors 6 CH EMI FILTER W/ESD

Lifecycle:

New from this manufacturer.

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