RJL6020DPK
REJ03G1618-0300 Rev.3.00 Jan 22, 2010
Page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V
(BR)DSS
600 — — V I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current I
DSS
— — 10 μA V
DS
= 600 V, V
GS
= 0
Gate to source leak current I
GSS
— — ±0.1 μA V
GS
= ±30 V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
1.5 — 4.0 V V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state
resistance
R
DS(on)
— 0.17 0.21 Ω I
D
= 15 A, V
GS
= 10 V
Note4
Input capacitance Ciss — 4750 — pF
Output capacitance Coss — 465 — pF
Reverse transfer capacitance Crss — 53 — pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Turn-on delay time t
d(on)
— 44 — ns
Rise time t
r
— 64 — ns
Turn-off delay time t
d(off)
— 206 — ns
Fall time t
f
— 121 — ns
I
D
= 15 A
V
GS
= 10 V
R
L
= 20 Ω
Rg = 10 Ω
Total gate charge Qg — 130 — nC
Gate to source charge Qgs — 21 — nC
Gate to drain charge Qgd — 53 — nC
V
DD
= 480 V
V
GS
= 10 V
I
D
= 30 A
Body-drain diode forward voltage V
DF
— 0.96 1.60 V I
F
= 30 A, V
GS
= 0
Note4
Body-drain diode reverse recovery time t
rr
— 180 — ns
I
F
= 30 A, V
GS
= 0
di
F
/dt = 100 A/μs
Notes: 4. Pulse test
