NL27WZ16DFT2G

© Semiconductor Components Industries, LLC, 2012
May, 2012 Rev. 9
1 Publication Order Number:
NL27WZ16/D
NL27WZ16
Dual Buffer
The NL27WZ16 is a high performance dual buffer operating from a
1.65 to 5.5 V supply. At V
CC
= 3 V, high impedance TTL compatible
inputs significantly reduce current loading to input drivers while TTL
compatible outputs offer improved switching noise performance.
Features
Extremely High Speed: t
PD
2.0 ns (typical) at V
CC
= 5 V
Designed for 1.65 V to 5.5 V V
CC
Operation
Over Voltage Tolerant Inputs
LVTTL Compatible Interface Capability With 5 V TTL Logic
with V
CC
= 3 V
LVCMOS Compatible
24 mA Balanced Output Sink and Source Capability
Near Zero Static Supply Current Substantially Reduces System
Power Requirements
Chip Complexity: FET = 72; Equivalent Gate = 18
These Devices are PbFree and are RoHS Compliant
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ100
Qualified and PPAP Capable
V
CC
IN A1 OUT Y1
GND
IN A2
OUT Y21
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
IN A2 OUT Y2
1
OUT Y1IN A1
1
2
34
5
6
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
SC88/SC706/SOT363
DF SUFFIX
CASE 419B
1
TSOP6
DT SUFFIX
CASE 318G
1
FUNCTION TABLE
L
H
L
H
PIN ASSIGNMENT
1
2
3
4
5
6
IN A1
GND
IN A2
OUT Y2
V
CC
OUT Y1
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1
1
MR M G
G
MR = Device Code
M = Date Code*
G = PbFree Package
*Date Code orientation and/or position may vary
depending upon manufacturing location.
(Note: Microdot may be in either location)
MR M G
G
M
Pin Function
A Input Y Output
NL27WZ16
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2
MAXIMUM RATINGS
Symbol Characteristics Value Units
V
CC
DC Supply Voltage 0.5 to +7.0 V
V
I
DC Input Voltage 0.5 V
I
+7.0 V
V
O
DC Output Voltage
Output in Z or LOW State (Note 1)
0.5 V
O
+7.0 V
I
IK
DC Input Diode Current
V
I
< GND
50 mA
I
OK
DC Output Diode Current
V
O
< GND
50 mA
I
O
DC Output Sink Current ±50 mA
I
CC
DC Supply Current per Supply Pin ±100 mA
I
GND
DC Ground Current per Ground Pin ±100 mA
T
STG
Storage Temperature Range 65 to +150 °C
P
D
Power Dissipation in Still Air
SC88, TSOP6 200
mW
q
JA
Thermal Resistance
SC88, TSOP6 333
°C/W
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias +150 °C
V
ESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
I
Latchup
Latchup Performance
Above V
CC
and Below GND at 85°C (Note 5) ±500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. I
O
absolute maximum rating must be observed.
2. Tested to EIA/JESD22A114A
3. Tested to EIA/JESD22A115A
4. Tested to JESD22C101A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Units
V
CC
Supply Voltage
Operating
Data Retention Only
1.65
1.5
5.5
5.5
V
V
I
Input Voltage 0 5.5 V
V
O
Output Voltage (High or LOW State) 0 5.5 V
T
A
Operating FreeAir Temperature 55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate
V
CC
= 1.8 V ±0.15 V
V
CC
= 2.5 V ±0.2 V
V
CC
= 3.0 V ±0.3 V
V
CC
= 5.0 V ±0.5 V
0
0
0
0
20
20
10
5
ns/V
NL27WZ16
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3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Condition
V
CC
(V)
T
A
= 255C 555C 3 T
A
3 1255C
Units
Min Typ Max Min Max
V
IH
HighLevel Input
Voltage
1.65 to 1.95
2.3 to 5.5
0.75 V
CC
0.7 V
CC
0.75 V
CC
0.7 V
CC
V
V
IL
LowLevel Input
Voltage
1.65 to 1.95
2.3 to 5.5
0.25 V
CC
0.3 V
CC
0.25 V
CC
0.3 V
CC
V
V
OH
HighLevel Output
Voltage
V
IN
= V
IH
I
OH
= 100 mA
1.65
1.8
2.3
3.0
4.5
1.55
1.7
2.2
2.9
4.4
1.65
1.8
2.3
3.0
4.5
1.55
1.7
2.2
2.9
4.4
V
I
OH
= 4 mA
I
OH
= 8 mA
I
OH
= 16 mA
I
OH
= 24 mA
I
OH
= 32 mA
1.65
2.3
3.0
3.0
4.5
1.29
1.9
2.4
2.3
3.8
1.52
2.15
2.80
2.68
4.20
1.29
1.9
2.4
2.3
3.8
V
V
OL
LowLevel Output
Voltage
V
IN
= V
IL
I
OL
= 100 mA
1.65
1.8
2.3
3.0
4.5
0.0
0.0
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
I
OL
= 4 mA
I
OL
= 8 mA
I
OL
= 16 mA
I
OL
= 24 mA
I
OL
= 32 mA
1.65
2.3
3.0
3.0
4.5
0.08
0.10
0.15
0.22
0.22
0.24
0.30
0.40
0.55
0.55
0.24
0.30
0.40
0.55
0.55
V
I
IN
Input Leakage Current V
IN
= 5.5 V or GND 0 to 5.5 ±0.1 ±1.0
mA
I
OFF
Power Off Leakage
Current
V
IN
= 5.5 V or
V
OUT
= 5.5 V
0 1 10
mA
I
CC
Quiescent Supply
Current
V
IN
= 5.5 V or GND 5.5 1 10
mA
AC ELECTRICAL CHARACTERISTICS t
R
= t
F
= 2.5 ns; C
L
= 50 pF; R
L
= 500 W
Symbol Parameter Condition V
CC
(V)
T
A
= 25°C 55°C 3 T
A
3 125°C
Units
Min Typ Max Min Max
t
PLH
t
PHL
Propagation Delay
(Figure 3 and 4)
R
L
= 1 MW, C
L
= 15 pF
1.8 ± 0.15 1.8 8.0 9.6 1.8 10.2
ns
R
L
= 1 MW, C
L
= 15 pF
2.5 ± 0.2 1.0 3.0 5.2 1.0 5.8
R
L
= 1 MW, C
L
= 15 pF
3.3 ± 0.3
0.8 2.3 3.6 0.8 4.0
R
L
= 500 W, C
L
= 50 pF
1.2 3.0 4.6 1.2 5.1
R
L
= 1 MW, C
L
= 15 pF
5.0 ± 0.5
0.5 1.8 2.9 0.5 3.2
R
L
= 500 W, C
L
= 50 pF
0.8 2.4 3.8 0.8 4.2
CAPACITIVE CHARACTERISTICS
Symbol Parameter Condition Typical Units
C
IN
Input Capacitance V
CC
= 5.5 V, V
I
= 0 V or V
CC
7.0 pF
C
PD
Power Dissipation Capacitance (Note 6) 10 MHz, V
CC
= 3.3 V, V
I
= 0 V or V
CC
10 MHz, V
CC
= 5.5 V, V
I
= 0 V or V
CC
9
11
pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
) I
CC
. C
PD
is used to determine the noload dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
) I
CC
V
CC
.

NL27WZ16DFT2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Buffers & Line Drivers 1.65-5.5V Dual
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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