2 www.irf.com
IRLR/U4343 & IRLU4343-701
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 15 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 42 50
mΩ
––– 57 65
V
GS(th)
Gate Threshold Voltage 1.0 ––– ––– V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -4.4 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 2.0 µA
––– ––– 25
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
g
fs
Forward Transconductance 8.8 ––– ––– S
Q
g
Total Gate Charge ––– 28 42
Q
gs
Pre-Vth Gate-to-Source Charge ––– 3.5 –––
V
GS
= 10V
Q
gd
Gate-to-Drain Charge ––– 9.5 –––
I
D
= 19A
Q
godr
Gate Charge Overdrive ––– 15 ––– See Fig. 6 and 19
t
d(on)
Turn-On Delay Time ––– 5.7 –––
t
r
Rise Time ––– 19 –––
t
d(off)
Turn-Off Delay Time ––– 23 ––– ns
t
f
Fall Time ––– 5.3 –––
C
iss
Input Capacitance ––– 740 –––
C
oss
Output Capacitance ––– 150 ––– pF
C
rss
Reverse Transfer Capacitance ––– 59 –––
C
oss
Effective Output Capacitance ––– 250 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
i
A
E
AR
Repetitive Avalanche Energy
i
mJ
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
@ T
C
= 25°C
Continuous Source Current ––– ––– 26
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 80
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 52 78 ns
Q
rr
Reverse Recovery Charge ––– 100 150 nC
V
DS
= 25V, I
D
= 19A
V
DS
= 44V
V
DD
= 28V, V
GS
= 10V
e
integral reverse
ƒ = 1.0MHz, See Fig.5
I
D
= 19A
R
G
= 2.5Ω
V
GS
= 0V, V
DS
= 0V to -44V
MOSFET symbol
showing the
See Fig. 14, 15, 17a, 17b
Typ.
–––
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 4.7A
e
T
J
= 25°C, I
S
= 19A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 19A
di/dt = 100A/µs
e
V
GS
= 0V
Conditions
p-n junction diode.
V
DS
= 50V
and center of die contact
f
Max.
160
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 4.5V, I
D
= 3.8A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 55V, V
GS
= 0V