Vishay Siliconix
Si1413DH
Document Number: 71878
S10-0935-Rev. B, 19-Apr-10
www.vishay.com
1
P-Channel 20 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs: 1.8 V Rated
• Thermally Enhanced SC-70 Package
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switching
• PA Switch
• Level Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.115 at V
GS
= - 4.5 V
- 2.9
0.155 at V
GS
= - 2.5 V
- 2.4
0.220 at V
GS
= - 1.8 V
- 2.0
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
D
D
G
D
D
S
Marking Code
BC XX
Lot Traceability
and Date Code
Part # Code
YY
Ordering Information: Si1413DH-T1-E3 (Lead (Pb)-free)
Si1413DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
Note:
a. Surface mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 2.9 - 2.3
A
T
A
= 85 °C
- 2.0 - 1.6
Pulsed Drain Current
I
DM
- 8
Continuous Diode Current (Diode Conduction)
a
I
S
- 1.4 - 0.9
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.56 1.0
W
T
A
= 85 °C
0.81 0.52
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
60 80
°C/W
Steady State 100 125
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
34 45