Document Number: 72311
S11-1029-Rev. B, 23-May-11
www.vishay.com
5
Vishay Siliconix
DG9432, DG9433, DG9434
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Guarantee by design, not subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Guaranteed by 12 V leakage testing, not production tested.
g. Applies for DG9434 only.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS V+ = 12 V
Parameter Symbol
Test Conditions
Otherwise Unless Specified
V+ = 12 V, ± 10 %
, V
IN
= 0.8 V or 2.4 V
e
Temp.
a
Limits
- 40 °C °C to 85 °C
Unit
Min.
c
Typ.
b
Max.
c
Switch On Resistance
Analog Signal Range
e
V
ANALOG
Full V- V+ V
Drain-Source On-Resistance
R
(on)
V+ = 10.8 V, I
COM
= 1 mA, V
COM
= 9 V
Room
Full
19 30
40
R
DS(on)
Match R
(on)
Room 0.3 3.0
Switch Off Leakage Current
a
I
NC/NO(off)
V+ = 12 V, V
S
= 1/11 V, V
COM
= 11/1 V
Room
Full
- 1
- 10
0.3 1
10
nA
I
COM(off)
Room
Full
- 1
- 10
0.3 1
10
Channel On Leakage Current
a
I
COM(on)
Room
Full
- 1
- 10
0.3 1
10
Digital Control
Input, High Voltage
V
INH
V+ = 12 V
Full 2.4
V
Input, Low Voltage
V
INL
Full 0.8
Input Current
I
INH
- 1 1 µA
Dynamic Characteristics
Break-Before-Make
d,g
t
OPEN
V+ = 12 V, R
L
= 300
V
NO
= V
NC
= 8 V
C
L
= 35 pF, V
IN
= 0 V, 12 V
Room
Full
1
nsTur n - O n T i m e
t
ON
Room
Full
21 35
40
Turn-Off Time
t
OFF
Room
Full
618
25
Charge Injection
d
Q
C
L
= 1 nF, R
GEN
= 0 , V
g
= 0 V, V+ = 5 V
Room 0.36 pC
Off-Isolation
d
OIRR
C
L
= 5 pF, R
L
= 50 , f = 1 MHz
Room 75
dB
C
L
= 5 pF, R
L
= 50 , f = 10 MHz
Room 53
Crosstalk
d
X
TA LK
R
L
= 50 , f = 1 MHz, V+ = 5 V
Room 96
Source Off Capacitance
d
C
NO/NC(off)
f = 1 MHz, V
NC/NO
= 0 V
Room 7.5
pF
Drain Off Capacitance
d
C
COM(off)
f = 1 MHz, V
COM
= 0 V
Room 7.8
Drain On Capacitance
d
C
COM(on)
Room 22
Supply Current I+
V+ = 12 V, V
IN
= 0 or V+
Room - 1 - 1 µA
